The progress witnessed within the field of quantum computing has been enabled by the identification and understanding of interactions between the state of the quantum bit (qubit) and the materials within its environment. Beginning with an introduction of the parameters used to differentiate various quantum computing approaches, we discuss the evolution of the key components that comprise superconducting qubits, where the methods of fabrication can play as important a role as the composition in dictating the overall performance. We describe several mechanisms that are responsible for the relaxation or decoherence of superconducting qubits and the corresponding methods that can be utilized to characterize their influence. In particular, the effects of dielectric loss and its manifestation through the interaction with two-level systems (TLS) are discussed. We elaborate on the methods that are employed to quantify dielectric loss through the modeling of energy flowing through the surrounding dielectric materials, which can include contributions due to both intrinsic TLS and extrinsic aspects, such as those generated by processing. The resulting analyses provide insight into identifying the relative participation of specific sections of qubit designs and refinements in construction that can mitigate their impact on qubit quality factors. Additional prominent mechanisms that can lead to energy relaxation within qubits are presented along with experimental techniques which assess their importance. We close by highlighting areas of future research that should be addressed to help facilitating the successful scaling of superconducting quantum computing.

量子计算领域的进步是通过识别和理解量子位（qubit）状态与其环境中的材料之间的相互作用来实现的。从介绍用于区分各种量子计算方法的参数开始，我们讨论了构成超导量子位的关键组件的演变，其中制造方法在决定整体性能方面可以发挥与组成一样重要的作用。我们描述了几种负责超导量子位弛豫或退相干的机制，以及可用于表征其影响的相应方法。特别是，讨论了介电损耗的影响及其通过与两级系统 (TLS) 相互作用的表现。我们详细介绍了通过对流经周围介电材料的能量进行建模来量化介电损耗的方法，其中可能包括由于内在 TLS 和外在方面（例如由加工产生的方面）的贡献。由此产生的分析提供了洞察特定部分的量子位设计和构造改进的相对参与，可以减轻它们对量子位质量因素的影响。与评估其重要性的实验技术一起展示了可能导致量子位内能量弛豫的其他突出机制。