ABSTRACT

Copper monoxide is a popular p-type material in semiconductor and sensor technology. In this paper, Al-doped CuO thin film has been deposited on a glass substrate by the thermionic vacuum arc technique. The microstructural, morphological and optical properties were investigated. According to the X-ray diffraction patterns, the polycrystalline CuO material was obtained by means of the Al doping element. Using the Scherrer formula, the calculated crystallite size values are between 11 and 28 nm in different reflection planes. The thickness of the film was 50 nm. In the optical analysis, the average transmittance, absorbance and refractive index were 74%, 0.13, and 2.05, respectively. The optical band gap was 2.13 eV, which is in good agreement with the photoluminescence result. In the doping by Al, the band gap of the CuO shifted towards the visible region. Finally, the thin film is seen as a promising material for solar cell application.

摘要

一氧化铜是半导体和传感器技术中流行的 p 型材料。在本文中，Al 掺杂的 CuO 薄膜已通过热离子真空电弧技术沉积在玻璃基板上。研究了显微结构、形态学和光学性质。根据X射线衍射图，多晶CuO材料是通过Al掺杂元素获得的。使用 Scherrer 公式，计算出的微晶尺寸值在不同反射平面中介于 11 和 28 nm 之间。膜的厚度为50nm。在光学分析中，平均透射率、吸光度和折射率分别为 74%、0.13 和 2.05。光学带隙为 2.13 eV，与光致发光结果非常吻合。在 Al 的兴奋剂中，CuO 的带隙向可见光区移动。最后，薄膜被视为太阳能电池应用的有前途的材料。