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Liquid Crystalline Rylenediimides with Highly Order Smectic Layer Structure as a Floating Gate for Multiband Photoresponding Photonic Transistor Memory
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-10-23 , DOI: 10.1002/aelm.202100798
Yi-Sa Lin, Yan-Cheng Lin, Wei-Chen Yang, Guan-Syuan Li, Ender Ercan, Chih-Chien Hung, Wen-Chen Chien, Wen-Chang Chen

With the growing demands of light fidelity technology, photonic transistor memory has gained considerable attention for next-generation optoelectronic devices. In this work, alkylated rylenediimides of 2,9-diphenethylanthra[2,1,9-def:6,5,10-d“e”f]diisoquinoline-1,3,8,10(2H,9H)-tetraone (C8-PDI) and 2,7-dioctylbenzo[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone (C8-NDI), and pyromellitic diimide of 2,6-dioctylpyrrolo[3,4-f]isoindole-1,3,5,7(2H,6H)-tetraone (C8-PMDI) have been used as floating gate electrets in the photonic field-effect transistor-type memory. The structure-optics-performance relationship of these rod-like molecules has been systematically studied, and the memory device exhibited a decent response to photowriting and electrical erasing processes, owing to the 3D ordered smectic layer structure and brickwork stacking. Therefore, an evenly distributed photogating moiety, efficient exciton dissociation associated with decent carrier tunneling and charge trapping can be obtained. Among them, the sought-after C8-NDI presents favorable energy level alignment, multiband photoresponding, and an optimal block ratio. The fabricated photonic memory with C8-NDI electret presented a remarkable memory switchability with a memory ratio of 104 and a stable memory ratio of 105 over 10,000 s. To the best of knowledge, this is the first work to utilize rylenediimides based liquid crystals as an efficient charge blocking electret, and these findings open an avenue for designing rod-like molecules with highly ordered liquid crystalline properties in the ultrafast photomemory devices.

中文翻译:

具有高度有序层列结构的液晶 Rylenediimides 作为多波段光响应光子晶体管存储器的浮栅

随着对光保真技术的需求不断增长,光子晶体管存储器在下一代光电器件中获得了相当大的关注。在这项工作中,2,9-二苯乙基蒽[2,1,9-def:6,5,10-d“e”f]二异喹啉-1,3,8,10(2H,9H)-四酮( C8-PDI) 和 2,7-二辛基苯并[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone (C8-NDI),以及 2,6-二辛基吡咯并的均苯四甲酸二亚胺[ 3,4-f]isoindole-1,3,5,7(2H,6H)-tetraone (C8-PMDI) 已被用作光子场效应晶体管型存储器中的浮栅驻极体。系统地研究了这些棒状分子的结构-光学-性能关系,并且由于3D有序近晶层结构和砖砌堆叠,存储器件对光刻和电擦除过程表现出良好的响应。所以,可以获得均匀分布的光选通部分,与适当的载流子隧穿和电荷俘获相关的有效激子解离。其中,广受欢迎的 C8-NDI 呈现出良好的能级排列、多波段光响应和最佳的块比。使用 C8-NDI 驻极体制造的光子存储器具有显着的存储器可切换性,存储器比率为 104和 10 5超过 10,000 秒的稳定内存比率。据了解,这是第一项利用基于 rylenediimides 的液晶作为有效电荷阻挡驻极体的工作,这些发现为在超快光存储器件中设计具有高度有序液晶特性的棒状分子开辟了道路。
更新日期:2021-10-23
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