Ion implantation can be used to dope silicon devices, but can be problematic when applied to the atomically thin crystal structure of two-dimensional materials — an increasing range of alternative methods is though available.

中文翻译：

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二维掺杂

离子注入可用于掺杂硅器件，但当应用于二维材料的原子级薄晶体结构时可能会出现问题——尽管可用的替代方法范围越来越广。