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Optoelectronic Functionality of BiFeO3–SrTiO3 Interface
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-10-22 , DOI: 10.1002/aelm.202100665
Hang‐Bo Zhang 1 , Marin Alexe 1
Affiliation  

One effective way to extend the functional degree of freedom for semiconductors is to introduce structural defects (e.g., surface or interface) and chemical defects as they commonly exist and modify the properties of the entity. Here, the optoelectronic properties of bismuth ferrite thin films and their tuning by the interface between the film and the strontium titanate substrate are reported. The defects that have been demonstrated, especially oxygen vacancies, are of paramount importance in the photoelectric properties of a film-substrate system. A detailed analysis of the oxygen vacancy levels supports the role of the interface in carrier transport. These results provide a new strategy to design the optoelectronic device via usual defect doping and interface coupling.

中文翻译:

BiFeO3-SrTiO3界面的光电功能

扩展半导体功能自由度的一种有效方法是引入结构缺陷(例如,表面或界面)和化学缺陷,因为它们通常存在并修改实体的属性。在这里,报道了铋铁氧体薄膜的光电特性及其通过薄膜与钛酸锶衬底之间的界面进行的调节。已经证明的缺陷,尤其是氧空位,对于薄膜-基板系统的光电性能至关重要。对氧空位水平的详细分析支持界面在载流子传输中的作用。这些结果为通过通常的缺陷掺杂和界面耦合设计光电器件提供了一种新策略。
更新日期:2021-10-22
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