In this paper, a pulsed electrically pumped GaN-based vertical-cavity surface-emitting laser (VCSEL) with one dielectric distributed Bragg reflector and one n-GaN monolithic high-index contrast grating (MHCG) mirror was demonstrated at room temperature. The reflectance of the n-GaN MHCG and cavity mode behaviors of the VCSEL with MHCG for varying n-GaN thickness, MHCG pattern diameter, and current aperture size were numerically investigated. Measured characteristics of the fabricated device showed that the lasing action started at an injection current of 10.2 mA, corresponding to a current density of about $15.1{\text{kA/}\mathrm{cm}}^2$. Above threshold, the measured slope efficiency was $6.2\times {10}^{-3}\mathrm{W}/\mathrm{A}$, and the output power was 0.13 mW at 30 mA. Moreover, the measured lasing peak occurring at 403.4 nm and the longitudinal mode spacing of 5.6 nm were in good agreement with simulations. The incorporation of an n-GaN MHCG mirror not only greatly simplified the fabrication but also substantially improved the lasing characteristics in comparison to the previous work applying ${\mathrm{TiO}}_2$ HCG mirrors.

中文翻译：

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用于GaN基垂直腔面发射激光器的单片高折射率对比光栅镜

在本文中，在室温下展示了一种脉冲电泵浦 GaN 基垂直腔面发射激光器 (VCSEL)，该激光器具有一个电介质分布式布拉格反射器和一个 n-GaN 单片高折射率对比光栅 (MHCG) 反射镜。数值研究了 n-GaN MHCG 的反射率和具有 MHCG 的 VCSEL 在不同 n-GaN 厚度、MHCG 图案直径和电流孔径尺寸下的腔模式行为。所制造器件的测量特性表明，激光作用始于 10.2 mA 的注入电流，对应的电流密度约为$15.1{\text{K a/}\mathrm{厘米}}^2$. 高于阈值，测得的斜率效率为$6.2\times {10}^{-3}\mathrm{宽}/\mathrm{一种}$，30 mA 时的输出功率为 0.13 mW。此外，测得的激光峰值出现在 403.4 nm 处，纵模间距为 5.6 nm，与模拟非常吻合。与之前的工作相比，n-GaN MHCG 反射镜的结合不仅大大简化了制造过程，而且还大大改善了激光特性。${\mathrm{二氧化钛}}_2$ HCG 镜子。