This article demonstrates a novel high efficiency ZnS/SnS/MoS₂ dual-heterojunction thin film solar cell. The device has been optimized with respect to the thickness, doping concentration, and defect density of each constituent layer including working temperature and back contact metal work function using SCAPS-1D simulator. The MoS₂ plays a promising role to serve as a back surface field (BSF) layer with commendatory band alignment, which provides an opportunity for higher absorption of longer wavelength photons utilizing the tail-states-assisted (TSA) two-step photon upconversion approach. The insertion of MoS₂ in the ZnS/SnS pristine structure offers a significant improvement of the power conversion efficiency (PCE) within the detailed-balance limit with a rise from 20.1 to 41.4% with V_OC of 0.91 V, J_SC of 53.4 mA/cm² and FF of 84.9%, respectively. This result reveals MoS₂ as an effective BSF for low cost, highly efficient dual-heterojunction structure for future fabrication.

中文翻译：

---

模拟高效 SnS 基双异质结薄膜太阳能电池的性能

本文展示了一种新型高效 ZnS/SnS/MoS ₂双异质结薄膜太阳能电池。该器件已使用 SCAPS-1D 模拟器在每个组成层的厚度、掺杂浓度和缺陷密度（包括工作温度和背接触金属功函数）方面进行了优化。MoS ₂作为背表面场 (BSF) 层发挥着有前景的作用，具有推荐带对齐，这为利用尾态辅助 (TSA) 两步光子上转换方法对更长波长光子的更高吸收提供了机会. MoS ₂的插入ZnS/SnS 原始结构中的功率转换效率 (PCE) 在详细平衡限制内显着提高，从 20.1% 上升到 41.4%，V _OC为 0.91 V，J _SC为 53.4 mA/cm ²和 FF分别为 84.9%。该结果表明，MoS ₂是一种用于未来制造的低成本、高效双异质结结构的有效 BSF。