当前位置：
X-MOL 学术
›
Adv. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Magnetic Topological Insulator Heterostructures: A Review
Advanced Materials ( IF 27.4 ) Pub Date : 2021-10-19 , DOI: 10.1002/adma.202102427 Jieyi Liu 1 , Thorsten Hesjedal 1
Advanced Materials ( IF 27.4 ) Pub Date : 2021-10-19 , DOI: 10.1002/adma.202102427 Jieyi Liu 1 , Thorsten Hesjedal 1
Affiliation
|
Topological insulators (TIs) provide intriguing prospects for the future of spintronics due to their large spin–orbit coupling and dissipationless, counter-propagating conduction channels in the surface state. The combination of topological properties and magnetic order can lead to new quantum states including the quantum anomalous Hall effect that was first experimentally realized in Cr-doped (Bi,Sb)2Te3 films. Since magnetic doping can introduce detrimental effects, requiring very low operational temperatures, alternative approaches are explored. Proximity coupling to magnetically ordered systems is an obvious option, with the prospect to raise the temperature for observing the various quantum effects. Here, an overview of proximity coupling and interfacial effects in TI heterostructures is presented, which provides a versatile materials platform for tuning the magnetic and topological properties of these exciting materials. An introduction is first given to the heterostructure growth by molecular beam epitaxy and suitable structural, electronic, and magnetic characterization techniques. Going beyond transition-metal-doped and undoped TI heterostructures, examples of heterostructures are discussed, including rare-earth-doped TIs, magnetic insulators, and antiferromagnets, which lead to exotic phenomena such as skyrmions and exchange bias. Finally, an outlook on novel heterostructures such as intrinsic magnetic TIs and systems including 2D materials is given.
中文翻译：
磁拓扑绝缘体异质结构：综述
拓扑绝缘体（TI）由于其大的自旋轨道耦合和表面态的无耗散、反向传播的传导通道，为自旋电子学的未来提供了令人着迷的前景。拓扑特性和磁序的结合可以产生新的量子态，包括首次在 Cr 掺杂 (Bi,Sb) 2 Te 3中通过实验实现的量子反常霍尔效应电影。由于磁性掺杂会产生有害影响，需要非常低的工作温度，因此人们正在探索替代方法。与磁有序系统的邻近耦合是一个明显的选择，有望提高温度以观察各种量子效应。这里概述了 TI 异质结构中的邻近耦合和界面效应，它提供了一个多功能材料平台，用于调整这些令人兴奋的材料的磁性和拓扑特性。首先介绍了通过分子束外延和合适的结构、电子和磁性表征技术进行异质结构生长。除了过渡金属掺杂和未掺杂的 TI 异质结构之外，还讨论了异质结构的示例，包括稀土掺杂的 TI、磁绝缘体和反铁磁体，这会导致诸如斯格明子和交换偏压等奇异现象。最后，对新型异质结构（例如本征磁性 TI 和包含 2D 材料的系统）进行了展望。
更新日期：2021-10-19
中文翻译：
磁拓扑绝缘体异质结构：综述
拓扑绝缘体（TI）由于其大的自旋轨道耦合和表面态的无耗散、反向传播的传导通道，为自旋电子学的未来提供了令人着迷的前景。拓扑特性和磁序的结合可以产生新的量子态，包括首次在 Cr 掺杂 (Bi,Sb) 2 Te 3中通过实验实现的量子反常霍尔效应电影。由于磁性掺杂会产生有害影响，需要非常低的工作温度，因此人们正在探索替代方法。与磁有序系统的邻近耦合是一个明显的选择，有望提高温度以观察各种量子效应。这里概述了 TI 异质结构中的邻近耦合和界面效应，它提供了一个多功能材料平台，用于调整这些令人兴奋的材料的磁性和拓扑特性。首先介绍了通过分子束外延和合适的结构、电子和磁性表征技术进行异质结构生长。除了过渡金属掺杂和未掺杂的 TI 异质结构之外，还讨论了异质结构的示例，包括稀土掺杂的 TI、磁绝缘体和反铁磁体，这会导致诸如斯格明子和交换偏压等奇异现象。最后，对新型异质结构（例如本征磁性 TI 和包含 2D 材料的系统）进行了展望。
京公网安备 11010802027423号