Ultraefficient Terahertz Emission Mediated by Shift-Current Photovoltaic Effect in Layered Gallium Telluride,ACS Nano

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Ultraefficient Terahertz Emission Mediated by Shift-Current Photovoltaic Effect in Layered Gallium Telluride
ACS Nano ( IF 15.8 ) Pub Date : 2021-10-19 , DOI: 10.1021/acsnano.1c04601
Mingyu Tong ₁ , Yuze Hu ₁ , Weibao He ₁ , Xiang-Long Yu ₂ , Siyang Hu ₁ , Xiang'ai Cheng ₁ , Tian Jiang ₁

Affiliation

Generating terahertz waves using thin-layered materials holds great potential for the realization of integrated terahertz devices. However, previous studies have been limited by restricted radiation intensity and finite efficiency. Exploiting materials with higher efficiency for terahertz emission has attracted increasing interest worldwide. Herein, with visible-light excitation, a thin-layered GaTe film is demonstrated to be a promising emitter of terahertz radiation induced by the shift-current photovoltaic effect. Through theoretical calculations, a transient charge-transfer process resulting from the asymmetric structure of GaTe is shown to be the origin of an ultrafast shift current. Furthermore, it was found that the amplitude of the resulting terahertz signals can be manipulated by both the fluence of the pump laser and the orientation of the sample. Such high emission efficiency from the shift current indicates that the layered material (GaTe) is an excellent candidate for photovoltaics and terahertz emitters.

中文翻译：

层状碲化镓中位移电流光伏效应介导的超高效太赫兹发射

使用薄层材料产生太赫兹波具有实现集成太赫兹器件的巨大潜力。然而，以前的研究受到辐射强度和效率有限的限制。开发具有更高效率的太赫兹发射材料已引起全世界越来越多的兴趣。在这里，在可见光激发下，薄层的 GaTe 薄膜被证明是一种很有前途的由位移电流光伏效应引起的太赫兹辐射发射器。通过理论计算，表明由 GaTe 的不对称结构引起的瞬态电荷转移过程是超快位移电流的起源。此外，结果表明，产生的太赫兹信号的幅度可以通过泵浦激光的能量密度和样品的方向来控制。偏移电流的如此高的发射效率表明层状材料 (GaTe) 是光伏和太赫兹发射器的绝佳候选材料。

更新日期：2021-11-23

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