Sintered Cu is considered as the most promising strategy in die-attachment, since its capacities of low-temperature bonding and high-temperature working. Many studies have reported the excellent properties of sintered Cu, but there is still some room for improvement. Here, strong Cu–Cu joints and insulated-gate bipolar transistor (IGBT) devices are achieved by sintering Cu paste and three composite pastes, and the mechanical, electrical, and microstructure properties of joints are investigated. The shear strength of pure Cu bonded joint is 23.4 MPa, which is improved to 26.64 MPa by introducing 0.6 wt% N-doped multi-walled carbon nanotubes (N-doped MWCNTs) into Cu paste. Excellent electrical properties are achieved as the resistivities of sintered Cu/N-doped MWCNTs layer and Cu/carboxylated WMCNTs are 2.252 and 2.551 μΩ·cm, respectively, which are lower than the sintered pure Cu layer (3.473 μΩ·cm). In addition, the functionalized MWCNTs are found exerted positive effects on the joint reliability. The enhancements on the joint qualities are attributed to that the functionalized MWCNTs improve the affinity of the Cu and CNTs and increase the density of bonding layer. This article provides an effective way to improve the sintered Cu joints sintering qualities, which is suitable for the attachment of next-generation devices and substrates.

中文翻译：

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电力电子封装用铜/功能化多壁碳纳米管复合浆料的低温烧结


烧结铜因其具有低温键合和高温工作的能力而被认为是芯片连接中最有前途的策略。许多研究报道了烧结铜的优异性能，但仍有一些改进的空间。在这里，通过烧结铜浆料和三种复合浆料实现了坚固的铜-铜接头和绝缘栅双极晶体管（IGBT）器件，并研究了接头的机械、电气和微观结构性能。纯铜粘结接头的剪切强度为23.4 MPa，通过在铜浆料中引入0.6 wt%氮掺杂多壁碳纳米管（N掺杂MWCNT），剪切强度提高到26.64 MPa。烧结Cu/N掺杂MWCNTs层和Cu/羧化WMCNTs的电阻率分别为2.252和2.551 μΩ·cm，低于烧结纯Cu层（3.473 μΩ·cm），具有优异的电性能。此外，功能化多壁碳纳米管被发现对接头可靠性产生积极影响。连接质量的提高归因于功能化的MWCNT提高了Cu和CNT的亲和力并增加了键合层的密度。本文提供了一种提高铜烧结接头烧结质量的有效方法，适用于下一代器件和基板的附着。