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Unconventional Resistive Switching Behavior in Fibroin-Based Memristor
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-10-15 , DOI: 10.1002/aelm.202100843 Ke Chang 1 , Anhua Dong 1 , Xinna Yu 1 , Binbin Liu 1 , Xinhui Zhao 1 , Renzhi Wang 1 , Zhikai Gan 1, 2 , Kang'an Jiang 1 , Yiru Niu 1 , Xinyuan Dong 1 , Diyuan Zheng 1 , Yizhen Li 1 , Peng Bao 1 , Zhuyikang Zhao 1 , Hui Wang 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-10-15 , DOI: 10.1002/aelm.202100843 Ke Chang 1 , Anhua Dong 1 , Xinna Yu 1 , Binbin Liu 1 , Xinhui Zhao 1 , Renzhi Wang 1 , Zhikai Gan 1, 2 , Kang'an Jiang 1 , Yiru Niu 1 , Xinyuan Dong 1 , Diyuan Zheng 1 , Yizhen Li 1 , Peng Bao 1 , Zhuyikang Zhao 1 , Hui Wang 1
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Transient memristor, which can be decomposed in water after completing the designed task, has shown great potentials in data security, implantable medical devices, and eco-friendly electronics. However, the further development of transient memristors is hindered by lacking practical approaches to deal with the dilemma between stability and degradability of the device. Here, using Ag-doped fibroin film as a switching medium, an unconventional right-angled-like resistive switching behavior is observed. Based on this novel resistive switching characteristic, a high-performance transient memristor is designed and fabricated. A self-assembled Ag nanoclusters model is proposed to interpret this unique electron-transport property. The self-assembled silver nanoclusters can redistribute the charge flux and lower the potential barrier, leading to novel switching characteristics. Furthermore, the device can work at ultralow operating voltages (0.03 V) over 300 cycles with an extremely high memory window of 107. The experimental findings open up a new path to design high-performance transient memristors for a safe and reliable data storage system.
中文翻译：
基于丝心蛋白的忆阻器中的非常规电阻开关行为
瞬态忆阻器在完成设计任务后可在水中分解，在数据安全、植入式医疗设备和环保电子产品等方面显示出巨大潜力。然而，瞬态忆阻器的进一步发展由于缺乏实用的方法来处理器件的稳定性和可降解性之间的困境而受到阻碍。在这里，使用 Ag 掺杂的丝心蛋白薄膜作为开关介质，观察到非常规的直角状电阻开关行为。基于这种新颖的阻变特性，设计并制作了一种高性能瞬态忆阻器。提出了一种自组装的 Ag 纳米团簇模型来解释这种独特的电子传输特性。自组装的银纳米团簇可以重新分配电荷通量并降低势垒，导致新颖的开关特性。此外，该器件可以在超低工作电压 (0.03 V) 下工作超过 300 个周期，具有 10 个极高的内存窗口7 . 实验结果为设计高性能瞬态忆阻器以实现安全可靠的数据存储系统开辟了一条新途径。
更新日期：2021-10-15
中文翻译：
基于丝心蛋白的忆阻器中的非常规电阻开关行为
瞬态忆阻器在完成设计任务后可在水中分解，在数据安全、植入式医疗设备和环保电子产品等方面显示出巨大潜力。然而，瞬态忆阻器的进一步发展由于缺乏实用的方法来处理器件的稳定性和可降解性之间的困境而受到阻碍。在这里，使用 Ag 掺杂的丝心蛋白薄膜作为开关介质，观察到非常规的直角状电阻开关行为。基于这种新颖的阻变特性，设计并制作了一种高性能瞬态忆阻器。提出了一种自组装的 Ag 纳米团簇模型来解释这种独特的电子传输特性。自组装的银纳米团簇可以重新分配电荷通量并降低势垒，导致新颖的开关特性。此外，该器件可以在超低工作电压 (0.03 V) 下工作超过 300 个周期，具有 10 个极高的内存窗口7 . 实验结果为设计高性能瞬态忆阻器以实现安全可靠的数据存储系统开辟了一条新途径。
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