Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity,ACS Applied Materials & Interfaces

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Embedding Azobenzol-Decorated Tetraphenylethylene into the Polymer Matrix to Implement a Ternary Memory Device with High Working Temperature/Humidity
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-10-14 , DOI: 10.1021/acsami.1c14686
Pan-Ke Zhou ₁ , Lu-Lu Zong ₁ , Kai-Yue Song ₁ , Zhen-Cong Yang ₁ , Hao-Hong Li _{1,

2} , Zhi-Rong Chen _{1,

2}

Affiliation

The development of new high-density memories that can work in harsh environments such as high temperature and humidity will be significant for some special occasions such as oil and geothermal industries. Herein, a facial strategy for implementing a ternary memory device with high working temperature/humidity was executed. In detail, an asymmetric aggregation-induced-emission active molecule (azobenzol-decorated tetraphenylethylene, i.e., TPE-Azo) was embedded into flexible poly(ethylene-alt-maleic anhydride) (PEM) to prepare a TPE-Azo@PEM composite, which served as an active layer to fabricate the FTO/TPE-Azo@PEM/Ag device. This device can demonstrate excellent ternary memory performances with a current ratio of 1:10^4.2:10^1.6 for “OFF”, “ON1”, and “ON2” states. Specially, it can exhibit good environmental endurance at high working temperature (350 °C) and humidity (RH = 90%). The ternary memory mechanism can be explained as the combination of aggregation-induced current/conductance and conformational change-induced charge transfer in the TPE-Azo molecule, which was verified by Kelvin probe force microscopy, UV–vis spectra, X-ray diffraction, and single-crystal structural analysis. This strategy can be used as a universal method for the construction of high-density multilevel memristors with good environmental tolerance.

中文翻译：

将偶氮苯修饰的四苯基乙烯嵌入聚合物基体中以实现具有高工作温度/湿度的三元存储器件

开发能够在高温高湿等恶劣环境下工作的新型高密度存储器，对于石油、地热等行业等一些特殊场合意义重大。在此，执行了用于实现具有高工作温度/湿度的三元存储器件的面部策略。详细地，非对称聚合诱导的发射活性分子（偶氮苯装饰四苯基，即，TPE-AZO）嵌入到柔性聚（乙烯- ALT -马来酸酐）（PEM）中以制备TPE-偶氮@ PEM复合材料，它用作制造 FTO/TPE-Azo@PEM/Ag 器件的活性层。该器件在电流比为 1:10 ^4.2 :10 ^{1.6 的情况下}可以展示出色的三元存储性能用于“OFF”、“ON1”和“ON2”状态。特别是在高工作温度（350°C）和高湿度（RH=90%）下表现出良好的环境耐受性。三元记忆机制可以解释为 TPE-偶氮分子中聚集诱导的电流/电导和构象变化诱导的电荷转移的组合，这已通过开尔文探针力显微镜、紫外-可见光谱、X 射线衍射、和单晶结构分析。该策略可作为构建具有良好环境耐受性的高密度多级忆阻器的通用方法。

更新日期：2021-10-27

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