Tungsten Ditelluride: Synthesis, Structure, and Magnetoresistance Property,Advanced Electronic Materials

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Tungsten Ditelluride: Synthesis, Structure, and Magnetoresistance Property
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-10-10 , DOI: 10.1002/aelm.202000893
Mingxing Cao _{1,

2} , Zhihong Wang _{3,

4} , Liwen Ma _{3,

4} , Liwen Zhang _{3,

4} , Man Wang _{3,

4} , Yangsi Liu _{3,

4} , Jian He ₂ , Xiaoli Xi _{1,

3,

4}

Affiliation

Tungsten ditelluride (WTe₂) is arising as an attractive material in magnetoresistance (MR) properties filed. The magnetoresistance properties of WTe₂ makes it an ideal material for its magnetoresistive heads of computer and magnetic sensor device applications. So far, people have developed various controlled synthesis methods to produce large-quantity uniform flat WTe₂ crystals. Nevertheless, none of the methods are sustainable, some methods use reducing gases, and some use very long heat preservation, and the process is very complicated. Here, a mild and fast self-flux method is described for WTe₂ synthesis that can avoid producing reducing gases. After conducting structural and physical tests, it is found that annealing time is critical for WTe₂ structure formation. Long annealing time improves the crystallinity of WTe₂ and makes its texture more obvious, increasing the conductivity of WTe₂. Therefore, it will lead to the anomalous nonsaturating positive magnetoresistance with different field dependent behaviors, reaching the ultrastrong magnetoresistive value of 1040% at 5 K and 14 T. The results provide a sustainable approach for uniform WTe₂ crystal synthesis, which will benefit the large-quantity production of WTe₂ magnetoresistive materials.

中文翻译：

二碲化钨：合成、结构和磁阻特性

二碲化钨 (WTe ₂ ) 作为磁阻 (MR) 特性领域的一种有吸引力的材料而兴起。WTe ₂的磁阻特性使其成为计算机和磁传感器设备应用的磁阻磁头的理想材料。迄今为止，人们已经开发出多种可控合成方法来生产大量均匀的扁平WTe ₂晶体。然而，没有一种方法是可持续的，有的使用还原性气体，有的使用很长时间的保温，而且过程非常复杂。在这里，描述了一种用于 WTe ₂的温和快速的自通量方法可以避免产生还原性气体的合成。在进行结构和物理测试后，发现退火时间对于 WTe ₂结构的形成至关重要。较长的退火时间提高了WTe ₂的结晶度，使其织构更加明显，提高了WTe ₂的导电性。因此，它将导致具有不同场相关行为的异常非饱和正磁阻，在 5 K 和 14 T 下达到 1040% 的超强磁阻值。该结果为均匀 WTe ₂晶体合成提供了可持续的方法，这将有利于大-WTe ₂磁阻材料的量产。

更新日期：2021-12-09

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