Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process
ACS Nano ( IF 15.8 ) Pub Date : 2021-10-08 , DOI: 10.1021/acsnano.1c04631 Kibret A Messalea 1 , Nitu Syed 1, 2 , Ali Zavabeti 3 , Md Mohiuddin 1 , Azmira Jannat 1 , Patjaree Aukarasereenont 2 , Chung K Nguyen 1 , Mei Xian Low 1 , Sumeet Walia 1 , Benedikt Haas 4 , Christoph T Koch 4 , Nasir Mahmood 1 , Khashayar Khoshmanesh 1 , Kourosh Kalantar-Zadeh 5 , Torben Daeneke 1
ACS Nano ( IF 15.8 ) Pub Date : 2021-10-08 , DOI: 10.1021/acsnano.1c04631 Kibret A Messalea 1 , Nitu Syed 1, 2 , Ali Zavabeti 3 , Md Mohiuddin 1 , Azmira Jannat 1 , Patjaree Aukarasereenont 2 , Chung K Nguyen 1 , Mei Xian Low 1 , Sumeet Walia 1 , Benedikt Haas 4 , Christoph T Koch 4 , Nasir Mahmood 1 , Khashayar Khoshmanesh 1 , Kourosh Kalantar-Zadeh 5 , Torben Daeneke 1
Affiliation
|
High dielectric constant (high-k) ultrathin films are required as insulating gate materials. The well-known high-k dielectrics, including HfO2, ZrO2, and SrTiO3, feature three-dimensional lattice structures and are thus not easily obtained in the form of distinct ultrathin sheets. Therefore, their deposition as ultrathin layers still imposes challenges for electronic industries. Consequently, new high-k nanomaterials with k in the range of 40 to 100 and a band gap exceeding 4 eV are highly sought after. Antimony oxide nanosheets appear as a potential candidate that could fulfill these characteristics. Here, we report on the stoichiometric cubic polymorph of 2D antimony oxide (Sb2O3) as an ideal high-k dielectric sheet that can be synthesized via a low-temperature, substrate-independent, and silicon-industry-compatible liquid metal synthesis technique. A bismuth–antimony alloy was produced during the growth process. Preferential oxidation caused the surface of the melt to be dominated by α-Sb2O3. This ultrathin α-Sb2O3 was then deposited onto desired surfaces via a liquid metal print transfer. A tunable sheet thickness between ∼1.5 and ∼3 nm was achieved, while the lateral dimensions were within the millimeter range. The obtained α-Sb2O3 exhibited high crystallinity and a wide band gap of ∼4.4 eV. The relative permittivity assessment revealed a maximum k of 84, while a breakdown electric field of ∼10 MV/cm was observed. The isolated 2D α-Sb2O3 nanosheets were utilized in top-gated field-effect transistors that featured low leakage currents, highlighting that the obtained material is a promising gate oxide for conventional and van der Waals heterostructure-based electronics.
中文翻译：
使用独立于基材的低温液态金属工艺制造的高 k 2D Sb2O3
需要高介电常数（高k）超薄膜作为绝缘栅材料。众所周知的高k电介质，包括 HfO 2、ZrO 2和 SrTiO 3，具有三维晶格结构，因此不容易以不同的超薄片的形式获得。因此，它们作为超薄层的沉积仍然给电子工业带来了挑战。因此，具有k 的新型高k纳米材料在 40 到 100 的范围内和超过 4 eV 的带隙受到高度追捧。氧化锑纳米片似乎是可以满足这些特性的潜在候选者。在这里，我们报告了 2D 氧化锑 (Sb 2 O 3 )的化学计量立方多晶型物，它是一种理想的高k介电片，可以通过低温、与基板无关且与硅工业兼容的液态金属合成来合成技术。在生长过程中产生了铋-锑合金。优先氧化导致熔体表面以α-Sb 2 O 3 为主。这种超薄 α-Sb 2 O 3然后通过液态金属印刷转移将其沉积到所需的表面上。实现了约 1.5 到 3 nm 之间的可调片厚度，而横向尺寸在毫米范围内。获得的α-Sb 2 O 3表现出高结晶度和~4.4 eV的宽带隙。相对介电常数评估显示最大k为 84，同时观察到约 10 MV/cm 的击穿电场。隔离的 2D α-Sb 2 O 3纳米片用于具有低泄漏电流的顶栅场效应晶体管，突出表明所获得的材料是用于常规和基于范德瓦尔斯异质结构的电子器件的有前途的栅极氧化物。
更新日期：2021-10-26
中文翻译：
使用独立于基材的低温液态金属工艺制造的高 k 2D Sb2O3
需要高介电常数（高k）超薄膜作为绝缘栅材料。众所周知的高k电介质，包括 HfO 2、ZrO 2和 SrTiO 3，具有三维晶格结构，因此不容易以不同的超薄片的形式获得。因此，它们作为超薄层的沉积仍然给电子工业带来了挑战。因此，具有k 的新型高k纳米材料在 40 到 100 的范围内和超过 4 eV 的带隙受到高度追捧。氧化锑纳米片似乎是可以满足这些特性的潜在候选者。在这里，我们报告了 2D 氧化锑 (Sb 2 O 3 )的化学计量立方多晶型物，它是一种理想的高k介电片，可以通过低温、与基板无关且与硅工业兼容的液态金属合成来合成技术。在生长过程中产生了铋-锑合金。优先氧化导致熔体表面以α-Sb 2 O 3 为主。这种超薄 α-Sb 2 O 3然后通过液态金属印刷转移将其沉积到所需的表面上。实现了约 1.5 到 3 nm 之间的可调片厚度，而横向尺寸在毫米范围内。获得的α-Sb 2 O 3表现出高结晶度和~4.4 eV的宽带隙。相对介电常数评估显示最大k为 84，同时观察到约 10 MV/cm 的击穿电场。隔离的 2D α-Sb 2 O 3纳米片用于具有低泄漏电流的顶栅场效应晶体管，突出表明所获得的材料是用于常规和基于范德瓦尔斯异质结构的电子器件的有前途的栅极氧化物。
京公网安备 11010802027423号