Sulfurization Engineering of One-Step Low-Temperature MoS2 and WS2 Thin Films for Memristor Device Applications,Advanced Electronic Materials

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Sulfurization Engineering of One-Step Low-Temperature MoS2 and WS2 Thin Films for Memristor Device Applications
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-10-07 , DOI: 10.1002/aelm.202100515
Yuqian Gu ₁ , Martha I. Serna ₁ , Sivasakthya Mohan _{1,

2} , Alejandra Londoño‐Calderon ₃ , Taimur Ahmed ₄ , Yifu Huang ₁ , Jack Lee ₁ , Sumeet Walia ₄ , Michael T. Pettes ₃ , Kenneth M. Liechti ₂ , Deji Akinwande _{1,

2}

Affiliation

2D materials have been of considerable interest as new materials for device applications. Non-volatile resistive switching applications of MoS₂ and WS₂ have been previously demonstrated; however, these applications are dramatically limited by high temperatures and extended times needed for the large-area synthesis of 2D materials on crystalline substrates. The experimental results demonstrate a one-step sulfurization method to synthesize MoS₂ and WS₂ at 550 °C in 15 min on sapphire wafers. Furthermore, a large area transfer of the synthesized thin films to SiO₂/Si substrates is achieved. Following this, MoS₂ and WS₂ memristors are fabricated that exhibit stable non-volatile switching and a satisfactory large on/off current ratio (10³–10⁵) with good uniformity. Tuning the sulfurization parameters (temperature and metal precursor thickness) is found to be a straightforward and effective strategy to improve the performance of the memristors. The demonstration of large-scale MoS₂ and WS₂ memristors with a one-step low-temperature sulfurization method with simple strategy to tuning can lead to potential applications such as flexible memory and neuromorphic computing.

中文翻译：

忆阻器器件应用的一步低温MoS2和WS2薄膜硫化工程

二维材料作为设备应用的新材料一直备受关注。_{MoS 2}和 WS ₂的非易失性电阻开关应用先前已被证明；然而，这些应用受到在晶体基板上大面积合成二维材料所需的高温和延长时间的极大限制。实验结果展示了一种一步硫化法，可在蓝宝石晶片上在 550 ° C 下 15 分钟内合成 MoS ₂和 WS _{2 。}此外，实现了合成薄膜到SiO ₂ /Si衬底的大面积转移。在此之后，MoS ₂和 WS ₂制造的忆阻器具有稳定的非易失性开关和令人满意的大开/关电流比（10 ³ –10 ⁵）和良好的均匀性。发现调整硫化参数（温度和金属前体厚度）是提高忆阻器性能的直接且有效的策略。大规模 MoS ₂和 WS ₂忆阻器的演示采用一步低温硫化方法和简单的调整策略可以带来潜在的应用，例如灵活的内存和神经形态计算。

更新日期：2021-10-07

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