Ferroelectric domain walls have emerged as a new type of interface in which the dynamic characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time adjustment of position, density and orientation of the walls. Because of electronic confinement, and of their distinct symmetry and chemical environment, the spatially mobile domain walls offer a wide range of functional electric and magnetic properties, representing excellent 2D components for the development of more agile next-generation nanotechnology. In this Review, we discuss how the field of domain-wall nanoelectronics evolved from classical device ideas to advanced concepts for multilevel resistance control in memristive and synaptic devices. Recent advances in modelling and atomic-scale characterization provide insight into the interaction of ferroelectric domain walls and point defects, offering additional routes for local property design. We also explore the discovery of functional domain walls in improper ferroelectrics and the intriguing possibility of developing the walls themselves into ultra-small electronic components, controlling electronic signals through their intrinsic physical properties. We conclude with a discussion of open experimental challenges and newly discovered domain-wall phenomena that may play an important role in future directions of the field.

铁电畴壁已成为一种新型界面，其中铁电的动态特性引入了空间迁移率元素，允许实时调整壁的位置、密度和方向。由于电子限制以及它们独特的对称性和化学环境，空间移动畴壁提供了广泛的功能性电和磁特性，代表了用于开发更灵活的下一代纳米技术的优秀二维组件。在这篇综述中，我们讨论了畴壁纳米电子学领域如何从经典器件思想演变为忆阻和突触器件中多级电阻控制的先进概念。建模和原子尺度表征的最新进展提供了对铁电畴壁和点缺陷相互作用的深入了解，为局部特性设计提供了额外的途径。我们还探索了在不当铁电体中功能畴壁的发现，以及将壁本身发展成超小型电子元件、通过其内在物理特性控制电子信号的有趣可能性。我们最后讨论了开放的实验挑战和新发现的畴壁现象，这些现象可能在该领域的未来方向中发挥重要作用。我们还探索了在不当铁电体中功能畴壁的发现，以及将壁本身发展成超小型电子元件、通过其内在物理特性控制电子信号的有趣可能性。我们最后讨论了开放的实验挑战和新发现的畴壁现象，这些现象可能在该领域的未来方向中发挥重要作用。我们还探索了在不当铁电体中功能畴壁的发现，以及将壁本身发展成超小型电子元件、通过其内在物理特性控制电子信号的有趣可能性。我们最后讨论了开放的实验挑战和新发现的畴壁现象，这些现象可能在该领域的未来方向中发挥重要作用。