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A stochastic resonator in a layered semiconductor device
International Journal of Modern Physics B ( IF 2.6 ) Pub Date : 2021-10-02 , DOI: 10.1142/s0217979221502842
Tibebe Birhanu 1 , Yoseph Abebe 2 , Lemi Demeyu 3 , Mesfin Taye 4 , Mulugeta Bekele 3
Affiliation  

In this paper, we propose a device that picks up a periodic but weak signal by amplifying it assisted by the existing background noise. The device consists of a doped layered semiconductor with three gates that generate a one-dimensional double-well potential along the semiconductor. A laser coolant is to be shined on the other side of the central gate perpendicular to the one-dimensional layer causing triple-well potential. A weak tunable oscillator imposed parallel to the layer that rocks the potential landscape can pick up an incoming signal of interest as a result of resonance. To justify the model, we carried out analytic calculation as well as Monte Carlo simulation. The two approaches agree reasonably well for all the different parameter values we used.

中文翻译:

分层半导体器件中的随机谐振器

在本文中,我们提出了一种设备,该设备通过在现有背景噪声的辅助下放大周期性但微弱的信号。该器件由具有三个栅极的掺杂层状半导体组成,沿半导体产生一维双阱电位。激光冷却剂将照射在垂直于一维层的中央栅极的另一侧,从而产生三阱势。一个弱可调振荡器平行于岩石潜在景观的层,可以通过共振拾取感兴趣的传入信号。为了证明模型的合理性,我们进行了解析计算以及蒙特卡罗模拟。对于我们使用的所有不同参数值,这两种方法相当一致。
更新日期:2021-10-02
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