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Thulium-doped tellurium oxide microring lasers integrated on a low-loss silicon nitride platform
Optical Materials Express ( IF 2.8 ) Pub Date : 2021-10-06 , DOI: 10.1364/ome.444087
Khadijeh Miarabbas Kiani 1 , Henry C. Frankis 1 , Richard Mateman 2 , Arne Leinse 2 , Andrew P. Knights 1 , Jonathan D. B. Bradley 1
Affiliation  

We demonstrate compact, monolithically integrated thulium-doped tellurium oxide microring lasers on a low-loss silicon nitride platform. We observe lasing in the wavelength range of 1815–1895 nm under 1610 nm resonant pumping at varying waveguide-microring gap sizes and on-chip single-sided output powers up to 4.5 mW. The microlasers exhibit thresholds as low as 18 mW (11 mW) and a single-sided slope efficiency as high as 11% (17%) with respect to the pump power coupled into the TeO2:Tm3+-coated Si3N4 bus waveguide (absorbed pump power). These results are a promising development for integrated tellurite glass devices and light sources for the emerging 2-µm band in silicon nitride photonic integrated circuits.

中文翻译:

集成在低损耗氮化硅平台上的掺铥氧化碲微环激光器

我们在低损耗氮化硅平台上展示了​​紧凑、单片集成的掺铥氧化碲微环激光器。我们在 1610 nm 谐振泵浦下观察到 1815–1895 nm 波长范围内的激光,在不同的波导微环间隙尺寸和高达 4.5 mW 的片上单侧输出功率下。相对于耦合到 TeO 2 :Tm 3+涂覆的 Si 3 N 4的泵浦功率,微型激光器表现出低至 18 mW (11 mW) 的阈值和高达 11% (17%) 的单侧斜率效率总线波导(吸收泵浦功率)。这些结果对于集成碲酸盐玻璃器件和用于氮化硅光子集成电路中新兴 2-µm 波段的光源来说是一个很有前途的发展。
更新日期:2021-11-01
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