Device Geometry Insights for Efficient Electrically Driven Insulator-to-Metal Transition in Vanadium Dioxide Thin-Films,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Device Geometry Insights for Efficient Electrically Driven Insulator-to-Metal Transition in Vanadium Dioxide Thin-Films
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-10-04 , DOI: 10.1002/aelm.202100428
Sumaiya Kabir ₁ , Shruti Nirantar ₁ , Mahta Monshipouri ₁ , Mei Xian Low ₁ , Sumeet Walia _{1,

2} , Sharath Sriram _{1,

3} , Madhu Bhaskaran _{1,

3}

Affiliation

Vanadium dioxide (VO₂) is a versatile phase change material that undergoes insulator-to-metal transition (IMT) triggered by multiple stimuli such as temperature, light, and electricity. Electrical stimuli offer greater degree of control over selected regions, with high density and addressability. However, there is limited understanding of parameters that govern electrically activated IMT, especially device structure and channel width. This work presents a metal–insulator–metal (MIM) structure to investigate three electrode arrangements: offset, no offset, and overlapping. It is experimentally determined that among the three electrode arrangements, the overlapping configuration of the device needs the least amount of voltage for switching, which is also supported by simulation results. In contrast, IMT in VO₂ is independent of extent of overlap between top and bottom electrodes and channel width. These findings are integral to designing and controlling the functional domains of VO₂ for energy-efficient, addressable, and scalable micro/nanoscale devices and sensor applications.

中文翻译：

二氧化钒薄膜中高效电驱动绝缘体到金属过渡的器件几何结构洞察

二氧化钒 (VO ₂ ) 是一种多功能相变材料，它会经历由温度、光和电等多种刺激触发的绝缘体到金属转变 (IMT)。电刺激对选定区域提供更大程度的控制，具有高密度和可寻址性。然而，对控制电激活 IMT 的参数，尤其是器件结构和沟道宽度的理解有限。这项工作提出了一种金属-绝缘体-金属 (MIM) 结构来研究三种电极排列：偏移、无偏移和重叠。实验确定，在三种电极排列中，器件的重叠配置需要最少的电压进行切换，这也得到了仿真结果的支持。相比之下，VO 中的 IMT_图2与顶部和底部电极之间的重叠程度和沟道宽度无关。这些发现对于设计和控制 VO ₂的功能域是不可或缺的，以实现节能、可寻址和可扩展的微/纳米级设备和传感器应用。

更新日期：2021-10-04

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11