High-index nanoparticles are known to support radiationless states called anapoles, where dipolar and toroidal moments interfere to inhibit scattering to the far field. In order to exploit the striking properties arising from these interference conditions in photonic integrated circuits, the particles must be driven in-plane via integrated waveguides. Here, we address the excitation of electric anapole states in silicon disks when excited on-chip at telecom wavelengths. In contrast to normal illumination, we find that the anapole condition—identified by a strong reduction of the scattering—does not overlap with the near-field energy maximum, an observation attributed to retardation effects. We experimentally verify the two distinct spectral regions in individual disks illuminated in-plane from closely placed waveguide terminations via far-field and near-field measurements. Our finding has important consequences concerning the use of anapole states and interference effects of other Mie-type resonances in high-index nanoparticles for building complex photonic integrated circuitry.

众所周知，高指数纳米粒子支持无辐射状态，称为 anapoles，其中偶极矩和环形矩会干扰以抑制向远场的散射。为了利用光子集成电路中这些干扰条件引起的惊人特性，必须通过集成波导在平面内驱动粒子。在这里，我们解决了在电信波长下在芯片上激发时硅盘中电 anapole 状态的激发。与正常照明相比，我们发现 anapole 条件（通过散射的强烈减少来识别）与近场能量最大值不重叠，这是一种归因于延迟效应的观察结果。我们通过远场和近场测量实验验证了从紧密放置的波导终端在平面内照明的单个磁盘中的两个不同光谱区域。我们的发现对于在高折射率纳米粒子中使用倒极状态和其他 Mie 型共振的干扰效应来构建复杂的光子集成电路具有重要意义。