Recently, perovskite quantum dots (PQDs) were employed as promising emitters in light-emitting diode devices (LEDs) mainly owing to their marvelous photoelectronics properties. However, these perovskite QLEDs suffered from the inefficient performance, especially their serious efficiency roll-off probably due to the exciton recombination dynamic in the interface of PQDs films and charge imbalance resulting from low electrical transportation. Herein, sodium dodecyl sulfate (SDS) was effectively introduced to synthesize PQDs with many excellent properties and eventually suppressed the efficiency roll-off of QLEDs. SDS-based PQDs films exhibited obviously enhanced radiative recombination, reduced trap density, and increased carrier mobility, especially the transportation of electrons. Therefore, the charge carrier was balanced at high current density together with the remarkably suppressed efficiency roll-off. QLEDs fabricated by SDS-capped PQDs exhibited significantly improved maximum brightness of 193,810 cd/m², and achieve the external quantum efficiency of 10.13%. More importantly, the EQE roll-off of QLED optimized in the thickness of emitting layer was only 1.5% at the current density of 200 mA/cm², representing a prominent achievement of our strategy.

最近，钙钛矿量子点（PQD）被用作发光二极管器件（LED）中很有前途的发射器，这主要是由于其奇妙的光电特性。然而，这些钙钛矿 QLED 的性能效率低下，特别是它们严重的效率下降可能是由于 PQD 薄膜界面中的激子复合动力学和低电传输导致的电荷不平衡。在此，有效地引入十二烷基硫酸钠 (SDS) 来合成具有许多优异性能的 PQD，并最终抑制 QLED 的效率滚降。基于 SDS 的 PQDs 薄膜表现出明显增强的辐射复合、降低的陷阱密度和增加的载流子迁移率，尤其是电子的传输。所以，电荷载流子在高电流密度下平衡，同时显着抑制了效率下降。由 SDS 封端的 PQD 制造的 QLED 的最大亮度显着提高，达到 193,810 cd/m²、外量子效率达到10.13%。更重要的是，在 200 mA/cm ²的电流密度下，优化发光层厚度的 QLED 的 EQE 滚降仅为 1.5%，这代表了我们策略的突出成就。