This book discusses silicon and wide bandgap (WBG) semiconductor-based devices. After the preface, it includes 14 carefully selected chapters to cover recent trends in WBG semiconductors, with the following subjects: power electronics challenges, junction diodes, Si MOSFETs, Si IGBTs, SiC MOSFETs, GaN transistors, module design and reliability, switching cell design, and prospects and outlooks for the power electronics technology. This high-quality book is illustrated with hundreds of highly pedagogical color figures, where important features are easily visible. A table of contents, a note about the editor, a preface, and an index are also present.

中文翻译：

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现代电力电子器件：物理、应用和可靠性 [图书新闻]


本书讨论了基于硅和宽带隙 (WBG) 半导体的器件。序言之后，包括 14 个精心挑选的章节，涵盖 WBG 半导体的最新趋势，主题如下：电力电子挑战、结型二极管、Si MOSFET、Si IGBT、SiC MOSFET、GaN 晶体管、模块设计和可靠性、开关单元设计，以及电力电子技术的前景和展望。这本高质量的书配有数百幅极具教学意义的彩色插图，重要特征清晰可见。还提供了目录、编辑注释、前言和索引。