In this paper, an improved transistor equivalent circuit noise model is proposed. This model takes the frequency dispersion effects into account and modified the induced gate current source (I_g) equation based on the classical Van der Ziel noise model. First, the conductance at V_d = 0 V (g_d0) is derived from DC bias condition, and the accuracy of channel thermal noise (I_d) is verified. Then, by analyzing the physical structure of the silicon-on-insulator (SOI) transistor, an equivalent lumped-parameter circuit model is established. The element initial values are extracted based on the measured S-parameters. Then, the parameters in the I_g equation are obtained through noise circle simulation in comparison with measurement data. In contrast to existing models, the frequency dispersion effect is analyzed and modeled using a three-order polynomial. The results show that with respect to the traditional noise model, the noise circle's root-mean-square error of this work is decreased from 23.16 to 1.55.

中文翻译：

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考虑频散效应的绝缘体上硅晶体管改进晶体管噪声等效电路模型

本文提出了一种改进的晶体管等效电路噪声模型。该模型考虑了频率色散效应，并在经典范德齐尔噪声模型的基础上修改了感应栅极电流源 ( I _g ) 方程。首先，V _d  = 0 V ( g _d0 ) 时的电导源自直流偏置条件，并验证了通道热噪声 ( I _d )的准确性。然后，通过分析绝缘体上硅（SOI）晶体管的物理结构，建立等效的集总参数电路模型。基于测量的S参数提取元素初始值。然后，I中的参数_g方程是通过噪声圈模拟与测量数据比较得到的。与现有模型相比，使用三阶多项式分析和建模频率色散效应。结果表明，相对于传统的噪声模型，该工作的噪声圆均方根误差从23.16降低到1.55。