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Terahertz Devices Using the Optical Activation of GeTe Phase Change Materials: Toward Fully Reconfigurable Functionalities
ACS Photonics ( IF 6.5 ) Pub Date : 2021-09-29 , DOI: 10.1021/acsphotonics.1c01086
Maxime Pinaud 1 , Georges Humbert 1 , Sebastian Engelbrecht 2 , Lionel Merlat 2 , Bernd M. Fischer 2 , Aurelian Crunteanu 1
Affiliation  

Multifunctional terahertz (THz) devices are crucial for the development of practical applications such as high-speed communications, spectroscopy, and imaging, but their expansion is still requiring efficient agility functions operating in the THz domain. Chalcogenide phase change materials (PCMs) with broadband responses and nonvolatile and reversible transitions between dielectric and metal-like phases were successfully investigated as agile elements in photonics or electronics applications, but their potential for controlling the THz waves is still under evaluation. We are demonstrating the optical control of specific states of the germanium telluride (GeTe) PCM and its integration as a control element for enabling future optically reconfigurable THz devices. The excellent contrast of the material’s THz properties in the two dissimilar states was used for optical-induced modulation of THz resonances of a metamaterial based on split-ring-resonator metallic structures integrating GeTe patterns. We experimentally confirm for the first time the feasibility of all dielectric GeTe-based THz polarizers, presenting broadband responses, high extinction ratios when the GeTe is in the metal-like phase, and almost transparency when amorphous. This highly functional approach based on optically controlled multioperational THz devices integrating PCMs is extremely stimulating for generating future disruptive developments (field-programmable metasurfaces, dielectric coding metamaterials) with multifunctional capabilities for THz waves manipulation.

中文翻译:

使用 GeTe 相变材料光学激活的太赫兹器件:实现完全可重构的功能

多功能太赫兹 (THz) 设备对于高速通信、光谱学和成像等实际应用的开发至关重要,但它们的扩展仍然需要在太赫兹域中运行的高效敏捷功能。硫族化物相变材料 (PCM) 具有宽带响应以及介电相和类金属相之间的非易失性和可逆跃迁,已被成功研究为光子学或电子学应用中的敏捷元件,但它们控制太赫兹波的潜力仍在评估中。我们正在演示碲化锗 (GeTe) PCM 特定状态的光学控制及其作为控制元件的集成,以实现未来的光学可重构太赫兹设备。材料在两种不同状态下的太赫兹特性的出色对比被用于基于集成 GeTe 图案的裂环谐振器金属结构的超材料的太赫兹谐振的光诱导调制。我们首次通过实验证实了所有基于介电 GeTe 的太赫兹偏振器的可行性,当 GeTe 处于类金属相时呈现宽带响应、高消光比,并且在非晶态时几乎透明。这种基于集成 PCM 的光控多操作太赫兹设备的高功能方法对于产生具有用于太赫兹波操纵的多功能能力的未来颠覆性发展(现场可编程超表面、介电编码超材料)极具刺激性。
更新日期:2021-11-17
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