There is a pressing engineering need to produce hexagonal SiGe, that is untemplated, to be able to develop optoelectronic devices with hex-SiGe and Si integrated on the same chip. We have contributed the timely, broad-interest advance of producing a bulk hexagonal SiGe landscape and explain how and under what conditions each Si–Ge composition becomes hexagonal. Moreover, the ability to synthesize different hexagonal polytypes affords further tailoring of optoelectronic properties. More information can be found in the Full Paper by G. Serghiou et al. (DOI: 10.1002/chem.202102595).

中文翻译：

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封面特征：使用压力和温度制备的六方 Si-Ge 类半导体合金 (Chem. Eur. J. 57/2021)

迫切需要生产六边形 SiGe，即非模板化，以便能够开发具有集成在同一芯片上的六边形 SiGe 和 Si 的光电器件。我们为生产块状六边形 SiGe 景观的及时、广泛兴趣做出了贡献，并解释了每个 Si-Ge 成分如何以及在什么条件下变成六边形。此外，合成不同六边形多型体的能力提供了进一步定制光电特性的能力。更多信息可以在 G. Serghiou 等人的全文中找到。（DOI：10.1002/chem.202102595）。