Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here we theoretically investigate protocols, based on transverse or longitudinal sideband driving, for implementing two-qubit gates between quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics in these qubits gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. We find that the transverse driving scheme yields faster gates, while longitudinal driving yields gates that are more resilient to photon decay. Our results suggest that the numerous tuning knobs of quantum-dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities greater than $95\%$ for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities greater than $99\%$.

中文翻译：

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由带红边带的微波腔介导的远程双混合量子位门

通过量子点量子位和超导微波腔之间的强耦合实现双量子位门需要实现​​比退相干率快得多的耦合率。通常，这涉及将量子位调谐到对电荷噪声相对不敏感的最佳位置，或者调谐到与微波腔共振的点。不幸的是，这样的操作点很少重合。在这里，我们从理论上研究了基于横向或纵向边带驱动的协议，用于在由微波腔介导的量子点混合量子位之间实现双量子位门。这些量子位中丰富的物理特性产生了两种类型的最佳点，它们可能发生在具有强电荷偶极矩的工作点。这种强相互作用为偏共振门控提供了新的机会，从而消除了长距离双量子位门的主要障碍之一。我们发现横向驱动方案产生更快的门，而纵向驱动产生对光子衰减更有弹性的门。我们的结果表明，量子点混合量子位的众多调谐旋钮使它们成为强耦合的良好候选者。特别是，我们展示了非共振红边带介导的双量子位门可以表现出大于$95\%$ 对于实际的操作参数，我们描述了可能产生大于的栅极保真度的改进 $99\%$.