Atomic structure of a single step and dynamics of Sn adatoms on the Si(111)−3×3−Sn surface,Physical Review B

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Atomic structure of a single step and dynamics of Sn adatoms on the Si(111)−3×3−Sn surface
Physical Review B ( IF 3.2 ) Pub Date : 2021-09-27 , DOI: 10.1103/physrevb.104.125437
R. A. Zhachuk ₁ , D. I. Rogilo ₁ , A. S. Petrov ₁ , D. V. Sheglov ₁ , A. V. Latyshev ₁ , S. Colonna ₂ , F. Ronci ₂

Affiliation

The atomic structure of well-ordered single steps on the

Si (111) - \sqrt{3} \times \sqrt{3} - Sn

surface and the dynamics of Sn adatoms in the vicinity of these steps was studied. The work was performed using low-temperature scanning tunneling microscopy (STM) and ab initio calculations based on the density-functional theory. The STM tip was used to record the tunneling current versus time on top of oscillating adatoms, keeping the feedback loop turned off. The dynamics of adatoms, detected as the telegraph noise present in the tunneling current, was registered near the steps at 80 K. The atomic structure model of the single steps consisting of Sn atomic chains along the steps was developed. This structure leads to the formation of potential double wells near the steps acting as traps for Sn atoms and explains the fluctuating current recorded in these areas.

中文翻译：

Si(111)-3×3-Sn表面单步原子结构和Sn吸附原子动力学

有序单步的原子结构

硅 (111) - \sqrt{3} \times \sqrt{3} - 锡

研究了这些台阶附近的 Sn 吸附原子的表面和动力学。这项工作是使用低温扫描隧道显微镜 (STM) 和基于密度泛函理论的从头计算进行的。STM 尖端用于记录振荡吸附原子顶部的隧道电流与时间的关系，保持反馈回路关闭。吸附原子的动力学被检测为隧道电流中存在的电报噪声，在 80 K 的台阶附近记录。开发了由沿着台阶的 Sn 原子链组成的单个台阶的原子结构模型。这种结构导致在台阶附近形成潜在的双阱，作为 Sn 原子的陷阱，并解释了在这些区域记录的波动电流。

更新日期：2021-09-28

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