The field-intensity dependence of high-harmonic generation in bulk gallium arsenide is studied. We experimentally find the oscillatory behavior at high fields where a perturbative scaling law no longer holds. By constructing a theoretical framework based on the Luttinger-Kohn model, we succeed in reproducing the observed oscillatory behavior. The qualitative agreement between the experiment and theory indicates that field-induced dynamic band modification is crucial in the nonperturbative regime. We show that the oscillatory behavior is naturally understood by dynamic localization that is based on the the Floquet subband picture.

中文翻译：

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GaAs 中超微扰机制的高次谐波产生

研究了大块砷化镓中高次谐波产生的场强依赖性。我们通过实验发现了扰动标度定律不再适用的高场的振荡行为。通过构建基于 Luttinger-Kohn 模型的理论框架，我们成功地再现了观察到的振荡行为。实验和理论之间的定性一致性表明，场诱导的动态带修改在非微扰状态下至关重要。我们表明，基于 Floquet 子带图片的动态定位可以自然地理解振荡行为。