The p-CuGaS₂ and Cr doped p-CuGaS₂ compounds are first fabricated by the solvothermal method using CuI, C₁₂H₂₆S, C₁₅H₂₁GaO₆, and C₁₅H₂₁CrO₆ as starting materials. The Cr³⁺ is successfully doped into the CuGaS₂ compounds with a single chalcopyrite structure and partially replaced Ga³⁺. The two additional sub-bandgap optical absorption edges (‘B’ and ‘C’) are observed in the UV–Vis–NIR absorption spectra of the sample with a Cr doping content of 0.99%. ‘C’ and ‘B’ correspond to the absorption extra photons of hν₁ (valence band maxima intermediate band, 0.8 eV) and hν₂ (intermediate band conduction band minimum, 1.2 eV), which proves the formation of the intermediate band in the Cr doped CuGaS₂. The Hall effect measurement shows that the resistivity of Cr doped CuGaS₂ compound decreases with the increase of Cr doping content, while the carrier concentration and mobility are increased. The half-filled state of intermediate band is confirmed according to Fermi level tested by the ultraviolet photoelectron spectroscopy. The photocurrent responses analysis suggests that the intermediate band leads to the increase of photo-induced carriers. The band structure and electron transition mechanism of Cr doped CuGaS₂ compounds are discussed in details.

p-CuGaS ₂和Cr掺杂的p-CuGaS ₂化合物首先使用CuI、C ₁₂ H ₂₆ S、C ₁₅ H ₂₁ GaO ₆和C ₁₅ H ₂₁ CrO ₆作为起始材料通过溶剂热法制备。Cr ³⁺成功掺杂到具有单一黄铜矿结构的CuGaS ₂化合物中并部分取代了Ga ³⁺. 在 Cr 掺杂量为 0.99% 的样品的 UV-Vis-NIR 吸收光谱中观察到两个额外的子带隙光学吸收边（'B' 和 'C'）。'C' 和 'B' 对应于 hν ₁（价带最大值中间带，0.8 eV）和 hν ₂（中间带导带最小值，1.2 eV）的吸收额外光子，这证明了中间带的形成Cr掺杂的CuGaS ₂。霍尔效应测量表明，Cr 掺杂的 CuGaS ₂的电阻率随着Cr掺杂量的增加，化合物减少，而载流子浓度和迁移率增加。根据紫外光电子能谱测试的费米能级确定中间带的半填充状态。光电流响应分析表明，中间带导致光生载流子的增加。详细讨论了Cr掺杂CuGaS ₂化合物的能带结构和电子跃迁机制。