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Sub-nanometer atomic layer deposited Al2O3 barrier layer for improving stability of nonfullerene organic solar cells
Organic Electronics ( IF 2.7 ) Pub Date : 2021-09-28 , DOI: 10.1016/j.orgel.2021.106351
Shiwei Wu 1 , Yanglin Zhao 2 , Chi Wang 3 , Shang Li 4 , Renaud Bachelot 2, 4 , Xavier Portier 5 , Bin Wei 3 , Tao Xu 2, 3
Affiliation  

Organic solar cells (OSCs) is a promising next-generation photovoltaic technology, however, the device stability remains to be the main barrier for its future commercialization. Herein, we reported the application of a sub-nanometer Al2O3 barrier layer in nonfullerene OSCs via atomic layer deposition (ALD), for the purpose of preventing metal ion diffusion from indium tin oxide (ITO) into the polymer layer caused by the corrosion of Poly(3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS). The thickness of the ALD-Al2O3 barrier layer was precisely optimized by controlling the number of ALD cycles (n) to achieve simultaneously good photoelectric properties and conformal coverage. An average power conversion efficiency (PCE) of 15.02% was demonstrated for the optimal OSCs with ALD-Al2O3 barrier layer. The above mentioned suppression of metal ion diffusion was experimentally confirmed by the cross sectional observations of transmission electron microscopy (TEM) and chemical mapping from energy-dispersive X-ray spectroscopy (EDX), resulting in a significantly improved operational stability with a device lifetime 3-times longer than that without ALD-Al2O3 barrier layer. Such ALD-assisted interface modification provides an effective approach to realize high-performance and stable OSCs.



中文翻译:

亚纳米原子层沉积Al2O3阻挡层以提高非富勒烯有机太阳能电池的稳定性

有机太阳能电池(OSCs)是一种很有前途的下一代光伏技术,然而,器件稳定性仍然是其未来商业化的主要障碍。在此,我们报道了通过原子层沉积 (ALD) 在非富勒烯 OSCs 中应用亚纳米 Al 2 O 3阻挡层,目的是防止金属离子从氧化铟锡 (ITO) 扩散到聚合物层中。聚(3,4-亚乙基二氧噻吩)的腐蚀:聚(苯乙烯磺酸盐)(PEDOT:PSS)。在ALD-Al的厚度2 ö 3势垒层精确地通过控制ALD循环(数优化Ñ) 同时实现良好的光电性能和保形覆盖。对于具有 ALD-Al 2 O 3阻挡层的最佳 OSC,证明了 15.02% 的平均功率转换效率 (PCE) 。通过透射电子显微镜 (TEM) 的横截面观察和能量色散 X 射线光谱 (EDX) 的化学映射,实验证实了上述金属离子扩散的抑制,从而显着提高了操作稳定性,器件寿命为 3 - 比没有ALD-Al 2 O 3阻挡层的时间长。这种 ALD 辅助的界面修改为实现高性能和稳定的 OSC 提供了一种有效的方法。

更新日期:2021-09-30
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