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Giant Piezoelectric Coefficient in Lead-Free BiFe0.975Ti0.025O3–CaTiO3 Solid Solution Thin Films
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-09-27 , DOI: 10.1021/acs.cgd.1c00697
Mingfang Shu 1, 2 , Bingbing Yang 1, 2 , Miao Liu 1, 2 , Shunjin Zhu 1, 2 , Sumei Li 1, 2 , Chengbing Pan 1, 2 , Jiamingzhu Wang 1, 2 , Lihua Yin 1 , Jie Yang 1 , Xuebin Zhu 1 , Yuping Sun 1, 3, 4
Affiliation  

Searching for lead-free piezoelectric thin films with a high piezoelectric coefficient is beneficial for applications in microelectromechanical systems. The solid solution method is verified as an effective route to largely improve the piezoelectric performance. Herein, we report the piezoelectric properties in polycrystalline (1 – x)BiFe0.975Ti0.025O3xCaTiO3 thin films. A giant effective piezoelectric coefficient of 542 pm/V has been achieved in 0.76BiFe0.975Ti0.025O3–0.24CaTiO3 thin films because of the enhanced dielectric constant as well as remanent polarization, which originated from the coexistence of rhombohedral and pseudo-cubic phases and enhanced growth kinetics. The results indicate a type of lead-free piezoelectric thin film based on BiFeO3 with the effective piezoelectric coefficient larger than 500 pm/V.

中文翻译:

无铅 BiFe0.975Ti0.025O3–CaTiO3 固溶体薄膜中的巨压电系数

寻找具有高压电系数的无铅压电薄膜有利于在微机电系统中的应用。固溶法被证实是大幅度提高压电性能的有效途径。在此,我们报告了多晶 (1 – x )BiFe 0.975 Ti 0.025 O 3x CaTiO 3薄膜的压电特性。在 0.76BiFe 0.975 Ti 0.025 O 3 –0.24CaTiO 3 中实现了 542 pm/V 的巨大有效压电系数由于菱形相和拟立方相的共存以及增强的生长动力学,提高了介电常数以及剩余极化,因此薄膜。结果表明,一种基于BiFeO 3的无铅压电薄膜,其有效压电系数大于500 pm/V。
更新日期:2021-11-03
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