GaAs Microisland Anodes Protected by Amorphous TiO2 Films Mitigate Corrosion Spreading During Water Oxidation in Alkaline Electrolytes,ACS Energy Letters

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GaAs Microisland Anodes Protected by Amorphous TiO2 Films Mitigate Corrosion Spreading During Water Oxidation in Alkaline Electrolytes
ACS Energy Letters ( IF 19.3 ) Pub Date : 2021-09-27 , DOI: 10.1021/acsenergylett.1c01174
Pakpoom Buabthong ₁ , Jake M. Evans ₂ , Katherine Z. Rinaldi ₂ , Kathleen M. Kennedy ₁ , Harold J. Fu ₂ , Zachary P. Ifkovits ₂ , Tai-Jung Kuo ₁ , Bruce S. Brunschwig ₃ , Nathan S. Lewis _{2,

3}

Affiliation

Microisland structures of ∼200 μm diameter GaAs circles were fabricated and used to spatially isolate defects during electrochemical operation as an anode in aqueous alkaline electrolytes. The microisland structures allowed one to measure the rate and distribution of the pinhole formation on electrodes protected by 110 nm-thick amorphous titanium dioxide (a-TiO₂) films formed by atomic layer deposition. Although no crystalline regions were detected by Raman spectroscopy, a limited number of defects were present in the a-TiO₂ layer and developed into new microscopic pinholes within the first 20 h of electrochemical operation. The film dissolved at a rate of <13 nm per day, and hence, intrinsic film dissolution was not the primary mode of pinhole formation during this first 20 h of operation. The fabrication processes presented herein only utilized chemical etching and mechanical polishing and, consequently, should be readily transferable to the fabrication of the more complicated np⁺-GaAs structures.

中文翻译：

由无定形 TiO2 薄膜保护的 GaAs 微岛阳极减轻碱性电解质中水氧化过程中的腐蚀扩散

制造了直径约 200 μm 的 GaAs 圆的微岛结构，并用于在电化学操作过程中空间隔离缺陷，作为碱性水溶液中的阳极。微岛结构允许人们测量由原子层沉积形成的110 nm 厚的非晶二氧化钛 ( a -TiO ₂ ) 膜保护的电极上针孔形成的速率和分布。虽然拉曼光谱没有检测到结晶区域，但a -TiO ₂中存在有限数量的缺陷层并在电化学操作的前 20 小时内发展成新的微观针孔。薄膜以每天 <13 nm 的速度溶解，因此，在最初的 20 小时操作期间，本征薄膜溶解不是针孔形成的主要模式。这里介绍的制造工艺仅使用化学蚀刻和机械抛光，因此，应该很容易转移到更复杂的 np ⁺ -GaAs 结构的制造中。

更新日期：2021-10-08

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