In this paper, the impact of the traditional interdigital DDSCR structure (TI-DDSCR) and the embedded DDSCR (EM-DDSCR) structure with and without P+ guard-ring is analyzed under the 0.5-μm complementary and double-diffused MOSFET (CDMOS) technology. In order to verify and predict the characteristics of those electrostatic discharge (ESD) protection devices, a transmission line pulse (TLP) testing system and device simulation platform have been used in this work. The test results show that the introduction of P + guard ring will increase the device forward trigger voltage (Vt1) by about 3 V and forward holding voltage (Vh) by 4-6 V, but has little effect on the forward failure current (It2). The reverse Vh is reduced by 4–6 V, while the reverse It2 depends on the layout geometry. Due to the different layout geometry, on the TI-DDSCR structure with P+ guard ring, their reverse It2 is reduced from 13.07A to 8.05A. On the contrary, on the EM-DDSCR with P+ guard ring, their reverse It2 increased from 6.55A to 10.10A.

本文分析了传统的叉指型DDSCR结构（TI-DDSCR）和带和不带P+保护环的嵌入式DDSCR（EM-DDSCR）结构在0.5μm互补双扩散MOSFET（CDMOS）下的影响技术。为了验证和预测这些静电放电（ESD）保护器件的特性，本文使用了传输线脉冲（TLP）测试系统和器件仿真平台。测试结果表明，P+保护环的引入会使器件正向触发电压（Vt1）增加约3V，正向保持电压（Vh）增加4-6V，但对正向失效电流（It2 ）。反向 Vh 降低了 4-6 V，而反向 It2 取决于布局几何形状。由于布局几何形状不同，在带有P+保护环的TI-DDSCR结构上，它们的反向It2从13.07A降低到8.05A。相反，在带有P+保护环的EM-DDSCR上，它们的反向It2从6.55A增加到10.10A。