As human activities expand into naturally or man-made radiation-prone environment, the need for radiation-hardened (Rad-Hard) electronic hardware surges. The state-of-the-art silicon-based and 2D materials-based Rad-Hard transistors can withstand up to 1 Mrad (Si) of total ionization dose (TID), while higher TID tolerance is being heatedly sought after. Here, few-layer MoS₂ Rad-Hard field-effect transistors (FETs) with polymer solid electrolyte (PSE) gate dielectrics are presented. The MoS₂ PSE-FETs exhibit a TID tolerance of up to 3.75 Mrad (Si) at a dose rate of 523 rad (Si) s⁻¹ and can be repaired with a moderate thermal annealing at 100 °C for 5 min. Combining the excellent intrinsic radiation tolerance and the reparability, the MoS₂ PSE-FETs reach a TID tolerance of up to 10 Mrad (Si). Complementary metal–oxide–semiconductor-like MoS₂ PSE-inverters are built and show high radiation tolerance as well. Furthermore, the feasibility of wafer-scale Rad-Hard PSE-inverter array is demonstrated using chemical vapor deposition grown monolayer MoS₂. These studies uncover the potential of 2D materials-based PSE devices in future Rad-Hard integrated circuits.

中文翻译：

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具有大辐射耐受性的可修复聚合物固体电解质门控 MoS2 场效应器件

随着人类活动扩展到自然或人为易受辐射的环境，对抗辐射 (Rad-Hard) 电子硬件的需求激增。最先进的硅基和 2D 材料基 Rad-Hard 晶体管可以承受高达 1 兆拉德 (Si) 的总电离剂量 (TID)，而更高的 TID 耐受性正受到热烈追捧。在这里，介绍了具有聚合物固体电解质 (PSE) 栅极电介质的少层 MoS ₂ Rad-Hard 场效应晶体管 (FET)。MoS ₂ PSE-FET 在 523 rad (Si) s ^-1的剂量率下表现出高达 3.75 Mrad (Si) 的 TID 容差，并且可以通过在 100 °C 下进行 5 分钟的适度热退火来修复。MoS ₂结合了优异的固有辐射耐受性和可修复性，PSE-FET 的 TID 容差高达 10 Mrad (Si)。互补金属氧化物半导体类 MoS ₂ PSE 逆变器已建成，并显示出高辐射耐受性。此外，使用化学气相沉积生长的单层 MoS ₂证明了晶圆级 Rad-Hard PSE 逆变器阵列的可行性。这些研究揭示了基于 2D 材料的 PSE 器件在未来 Rad-Hard 集成电路中的潜力。