We present a numerical study on swift ion induced effects in crystalline 3C silicon carbide (SiC) by the two-temperature model, which considering the electronic stopping and electronic-phonon coupling effects simultaneously. Given the results of overlapping radiation, there is only a minority of defects formed in the system during the ionization dominance stage. When the incident energy is braked from 20 MeV to 500 keV by ionization after the first 0.91 ps, the system enters the nuclear stopping stage, the incident energy decreases to 50 keV in 0.44 ps, accomplished with a dramatic increase of damage. In addition, for the low-energy ion implantation process, the sparse atomic arrangement perpendicular to the implantation direction will reduce the response of the atomic subsystem. Insights into the complex correlations between electronic and atomic response may pave the way to elucidate the mechanism behind the experimentally observed defect formation and evolution under extreme energy deposition.

我们通过双温度模型对晶体 3C 碳化硅 (SiC) 中的快速离子诱导效应进行了数值研究，该模型同时考虑了电子停止和电子-声子耦合效应。鉴于重叠辐射的结果，在电离优势阶段，系统中只形成了少数缺陷。当入射能量在前 0.91 ps 后通过电离从 20 MeV 制动到 500 keV 时，系统进入核停止阶段，入射能量在 0.44 ps 内下降到 50 keV，损伤急剧增加。此外，对于低能离子注入工艺，垂直于注入方向的稀疏原子排列会降低原子子系统的响应。