ZnO samples were prepared by an easy process based on green synthesis using three different concentrations of the parsley extract as natural reducing agents. The semiconductors were characterized structural, morphological, and opto-electronically by XRD, SEM-EDS, diffuse reflectance, and photo-response, respectively. Hexagonal structure ZnO-based semiconductors were obtained after the annealing process at 400 ºC. The morphology, bandgap, and photo-response of the synthesized samples were sensitive to the extract concentrations used in this work. The incorporation of Mg traces in the bulk of ZnO produced changes in the c-lattice parameter, consequently forming native defects such as O_i and V_o. The bandgap increased as the Mg content in the ZnO increased too. The photo-response analysis suggested that the samples with 0.44 and 1.33 at% of Mg were p-type ZnO, while the sample with 2.01 at% was n-type ZnO. It likely means that the conductivity type and other optoelectronic characteristics depend on the Mg content in the ZnO samples and the formation of predominant native defects due to the interaction of Mg with the crystalline structure.

ZnO 样品是通过基于绿色合成的简单方法制备的，使用三种不同浓度的欧芹提取物作为天然还原剂。分别通过 XRD、SEM-EDS、漫反射和光响应对半导体进行了结构、形态和光电表征。在 400 ºC 的退火工艺后获得六方结构的 ZnO 基半导体。合成样品的形态、带隙和光响应对本工作中使用的提取物浓度敏感。大量 ZnO 中微量 Mg 的掺入导致c晶格参数发生变化，从而形成天然缺陷，如 O _i和 V _o. 随着ZnO中Mg含量的增加，带隙也增加。光响应分析表明，含 0.44 和 1.33 at% Mg 的样品为 p 型 ZnO，而含 2.01 at% 的样品为 n 型 ZnO。这可能意味着导电类型和其他光电特性取决于 ZnO 样品中的 Mg 含量以及由于 Mg 与晶体结构的相互作用而形成的主要天然缺陷。