As the Bluetooth devices for the internet of things require extremely low-power dissipation to maintain longer battery life, a low-noise amplifier (LNA) as the main power-consuming part in the circuit needs more current-efficient topologies on power saving. This paper proposes a low-noise transconductance amplifier that combines the techniques of passive impendence transformation, gm-boosting technique, and current reuse, leading to a low power under the 1.2 V power supply. The transformer-based gm-boosted structure is applied in the four-transistor-stacked current-reuse topology leading to a 12× power saving. The proposed LNA simulated in 65 nm CMOS shows the NF of 3.3 dB and the IIP3 of −8 dBm, respectively, while dissipating 87 μW dc power. Compared to the previous low-power LNA, this design has fairly low-power consumption and low NF while other performance metrics remain competitive.

中文翻译：

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用于物联网应用的 65 nm CMOS 中的 2.4 GHz 87 μW 低噪声放大器

由于物联网的蓝牙设备需要极低的功耗以保持更长的电池寿命，因此作为电路主要功耗部分的低噪声放大器（LNA）在节电方面需要更高电流效率的拓扑结构。本文提出了一种结合无源阻抗变换技术的低噪声跨导放大器，G米- 升压技术和电流再利用，导致 1.2 V 电源下的低功耗。基于变压器的G米-boosted 结构应用于四晶体管堆叠电流重用拓扑，导致12×省电。在 65 nm CMOS 中模拟的拟议 LNA 分别显示 3.3 dB 的 NF 和 -8 dBm 的 IIP3，同时耗散 87μW 直流电源。与之前的低功耗 LNA 相比，该设计具有相当低的功耗和低 NF，而其他性能指标仍然具有竞争力。