The gallium vacancy is one of the dominant native point defects in β-Ga₂O₃, one that, together with its complexes, can have a major effect on free carrier densities and transport in this wide bandgap semiconductor. We used a combination of depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to identify the optical and energy-level properties of these defects as well as how their defect densities and spatial distributions vary with neutron irradiation and temperature-dependent-forming gas anneals. These studies reveal optical signatures that align closely with theoretical energy-level predictions. Likewise, our optical techniques reveal variations in these defect densities that are consistent with hydrogen passivation of gallium vacancies as a function of temperature and depth from the free Ga₂O₃ surface. These techniques can help guide the understanding and control of dominant native point defects in Ga₂O₃.

中文翻译：

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β-Ga2O3 中镓空位在中子辐照和合成气体退火下的深度分辨阴极发光和表面光电压光谱

镓空位是β-Ga ₂ O _{3 中}主要的本征点缺陷之一，与它的配合物一起，可以对这种宽带隙半导体中的自由载流子密度和传输产生重大影响。我们结合使用深度分辨阴极发光光谱和表面光电压光谱来识别这些缺陷的光学和能级特性，以及它们的缺陷密度和空间分布如何随中子辐照和温度相关的形成气体退火而变化。这些研究揭示了与理论能级预测密切相关的光学特征。同样，我们的光学技术揭示了这些缺陷密度的变化，这与镓空位的氢钝化一致，作为自由 Ga ₂ O ₃的温度和深度的函数表面。这些技术可以帮助指导理解和控制 Ga ₂ O _{3 中}的主要本征点缺陷。