The impact of a high-performance nanostructured device using metal nanoparticle (NP) deposition is studied in this paper. Two devices, namely, a silver (Ag) NP coated indium oxide (In₂O₃) nanostructured device and a bare In₂O₃ nanostructured device, were fabricated by glancing angle deposition aided electron beam vacuum coating system to study the impact of Ag NPs over In₂O₃ nanostructures. The morphology of Ag NPs, as-fabricated nanostructures, and growth regions was analyzed using field emission scanning electron microscopy. The formation of Ag₃O₄ monoclinic crystal structures was confirmed by high-resolution x-ray diffraction profiles. The current density (J)-voltage (V) plot shows the modulating performances of an Ag NP coated In₂O₃ nanostructured device due to the occurrence of trap states originated from the incorporation of Ag NPs. For in-depth analyses of the impact of Ag NPs, frequency-dependent capacitance (C)-V, conductance (G)-V, and impedance (Z)-V characteristics were analyzed. A free charge carrier concentration (N_d) of ∼8.23 × 10¹⁶/cm³, a trap concentration (N_T) of ∼1.48 × 10¹⁷/cm³, and a significant increment in conductance were observed for an Ag NP coated In₂O₃ nanostructured device (∼23.36 μS) than the bare In₂O₃ nanostructured device (∼13.05 μS) at a high frequency of 2 MHz. The delta-depletion model was implemented to obtain the C-V plots to match the experimental data adequately. The Ag NP coated In₂O₃ nanostructured device was further investigated by an analytical series circuit model, which manifests that the device can be used as catalysts, medical devices, etc.

中文翻译：

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银纳米粒子涂覆的 In2O3 纳米结构器件的合成和详细表征：一种分析和实验方法

本文研究了使用金属纳米颗粒 (NP) 沉积的高性能纳米结构器件的影响。通过掠射角沉积辅助电子束真空镀膜系统制备了两种器件，即银 (Ag) NP 涂层氧化铟 (In ₂ O ₃ ) 纳米结构器件和裸 In ₂ O ₃纳米结构器件，以研究 Ag 的影响In ₂ O ₃纳米结构上的NP 。使用场发射扫描电子显微镜分析了 Ag NPs、制造的纳米结构和生长区域的形态。Ag ₃ O ₄的形成单斜晶体结构由高分辨率 X 射线衍射图证实。电流密度 ( J )-电压 ( V ) 曲线显示了由于引入 Ag NP 引起的陷阱态的出现，Ag NP 涂覆的 In ₂ O ₃纳米结构器件的调制性能。为了深入分析 Ag NPs 的影响，分析了频率相关的电容 ( C ) -V、电导 ( G ) -V和阻抗 ( Z ) -V特性。自由载流子浓度 ( N _d ) 约为 8.23 × 10 ¹⁶ /cm³，一个陷阱浓度（Ñ _Ť）的~1.48×10 ¹⁷ /厘米³，和在电导显著增量，观察涂布在Ag NP ₂ ö ₃纳米结构的设备（~23.36 μ S）比裸在₂ ö ₃纳米结构器件（~13.05 μ S），频率为 2 MHz。实施 delta-depletion 模型以获得C - V图以充分匹配实验数据。Ag NP 包覆 In ₂ O ₃ 通过分析串联电路模型进一步研究了纳米结构器件，表明该器件可用作催化剂、医​​疗器械等。