To demonstrate area selective atomic layer deposition (ALD) using UV-nanoimprinted resin patterns as physical passivation masks, we investigated the removal of UV-cured resin films subjected to sequential mutual doses of trimethylaluminum (TMA) and H₂O by using dry etching procedures. On the basis of the removal of a residual layer characteristic from imprint resin patterns by anisotropic oxygen reactive ion etching (O₂ RIE), oxidatively etched UV-cured films were modified with TMA and H₂O in an ALD-like cyclic manner. Atomic force microscopy and time-of-flight secondary ion mass spectrometry [time-of-flight secondary ion mass spectrometry (TOF-SIMS)] analysis suggested that the combination of physical Ar ion milling and subsequent chemical O₂ RIE enabled the elimination of oxidized UV-cured resin masks modified with 5-cycle TMA doses. By contrast, Ar ion milling or O₂ RIE left organic or inorganic residues on silicon surfaces, respectively. A TMA-modified hybridized resin layer was etched by physical Ar ion milling; subsequently, the organic residual resin layer was removed by chemical O₂ RIE in the case of 5-cycle modification with TMA. The mapping image of Al⁺ visualized by TOF-SIMS suggested that line patterns of aluminum oxide were left selectively on unmasked silicon substrate surfaces by site-selective dry etching of TMA-modified imprint resin passivation masks with 500 nm linewidth.

中文翻译：

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用于区域选择性原子层沉积氧化铝的 UV 纳米压印树脂钝化掩模的选择性干法蚀刻

为了演示使用 UV 纳米压印树脂图案作为物理钝化掩模的区域选择性原子层沉积 (ALD)，我们研究了使用干法蚀刻程序去除经过连续相互剂量的三甲基铝 (TMA) 和 H ₂ O的 UV 固化树脂膜. 在通过各向异性氧反应离子蚀刻 (O ₂ RIE)从压印树脂图案上去除残留层特征的基础上，用 TMA 和 H ₂ O 以类似 ALD 的循环方式对氧化蚀刻的 UV 固化膜进行改性。原子力显微镜和飞行时间二次离子质谱[飞行时间二次离子质谱 (TOF-SIMS)] 分析表明，物理 Ar 离子研磨和随后的化学 O _{2 相结合}RIE 能够消除用 5 周期 TMA 剂量改性的氧化紫外线固化树脂掩模。相比之下，Ar 离子研磨或 O ₂ RIE 分别在硅表面留下有机或无机残留物。通过物理Ar离子研磨蚀刻TMA改性的杂化树脂层；随后，在用TMA进行5-cycle改性的情况下，通过化学O ₂ RIE去除有机残留树脂层。通过 TOF-SIMS 可视化的 Al ⁺映射图像表明，通过位点选择性干法蚀刻具有 500 nm 线宽的 TMA 改性压印树脂钝化掩模，氧化铝的线条图案被选择性地留在未掩模的硅基板表面上。