Electrical and ion beam analyses of yttrium and yttrium-titanium getter thin films oxidation,Journal of Vacuum Science & Technology B

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Electrical and ion beam analyses of yttrium and yttrium-titanium getter thin films oxidation
Journal of Vacuum Science & Technology B ( IF 1.4 ) Pub Date : 2021-08-18 , DOI: 10.1116/6.0001084
Clément Bessouet ₁ , Sylvain Lemettre ₁ , Charlotte Kutyla ₁ , Alain Bosseboeuf ₁ , Philippe Coste ₁ , Thierry Sauvage ₂ , Hélène Lecoq ₂ , Olivier Wendling ₂ , Aurélien Bellamy ₂ , Piyush Jagtap ₃ , Stéphanie Escoubas ₃ , Christophe Guichet ₃ , Olivier Thomas ₃ , Johan Moulin ₁

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Yttrium, titanium, and yttrium-titanium getter thin films were elaborated on silicon by coevaporation in ultrahigh vacuum. Y-Ti films exhibit nanometric crystallites size (18–35 nm) leading to a very high grain boundary density, which is a favorable microstructure for activation at low temperature. The yttrium content in Y-Ti alloys influences grain size, resistance against room temperature oxidation, and gettering performance for oxygen. Y-Ti films with an yttrium content higher than 30% show strong oxygen sorption during annealing at low temperature (<300 °C). After 1 h of annealing at 250 °C, it was estimated that the yttrium-based getter films can trap between 0.2 and 0.5 μmol of oxygen per cm², while no oxygen sorption was detected for a single metal titanium film. This makes Y-Ti getter alloys attractive candidates for the packaging of MEMS under vacuum with a low bonding temperature.

更新日期：2021-09-24

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