In this work, we have reported self-powered narrowband visible-light photodetectors based on organolead halide perovskite CH₃NH₃PbBr₃ (MAPbBr₃)/p-Si heterojunctions, which were prepared by growing MAPbBr₃ microcrystals on the p-Si substrate using a room-temperature antisolvent-assisted crystallization method. Morphological, structural, and optical investigations showed that the as-grown MAPbBr₃ microcrystals possessed a high crystalline quality. Electrical characterizations showed that the hetero-pn junction was formed within the MAPbBr₃/p-Si heterojunction. Thanks to the high crystalline quality of MAPbBr₃ microcrystals, the as-fabricated heterojunction photodetectors operating under a bias voltage of 0 V exhibited a high on–off ratio of ∼5.3 × 10⁵, a narrow photosensitivity spectrum with the full width at half maximum of 18.2 nm, a high photoresponse speed with the rising/falling time of 115.7/53.4 ms, and excellent stability to visible-light signals. Finally, the photodetection mechanism was proposed. It showed that the observed narrowband photodetection was attributed to the self-filtering effect caused by the thick MAPbBr₃ microcrystals. The results presented in this work will provide valuable strategies for the fabrication of self-powered narrowband visible-light photodetectors in the future.

中文翻译：

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由有机铅卤化物钙钛矿 CH3NH3PbBr3/p-Si 异质结实现的自供电窄带可见光光电检测

在这项工作中，我们报道了基于有机铅卤化物钙钛矿 CH ₃ NH ₃ PbBr ₃ (MAPbBr ₃ )/ p -Si 异质结的自供电窄带可见光光电探测器，该异质结是通过在p -Si 衬底上生长 MAPbBr ₃微晶制备的使用室温反溶剂辅助结晶法。形态、结构和光学研究表明，生长的 MAPbBr ₃微晶具有高结晶质量。电学表征表明，异质pn结形成于 MAPbBr ₃ / p-Si异质结。由于 MAPbBr ₃微晶的高结晶质量，在 0 V 偏置电压下运行的制造的异质结光电探测器表现出 ~5.3 × 10 ⁵的高开关比，窄光敏光谱，半峰全宽18.2 nm，高光响应速度，上升/下降时间为115.7/53.4 ms，对可见光信号具有出色的稳定性。最后提出了光电探测机制。这表明观察到的窄带光电探测归因于厚 MAPbBr ₃引起的自过滤效应微晶。这项工作中提出的结果将为未来制造自供电窄带可见光光电探测器提供有价值的策略。