Using the semibulk approach, p-In_xGa_1−xN semibulk (p-SB) templates were grown with an indium content ranging from 2.4% to 15.2% via metalorganic chemical vapor deposition. When compared to optimized bulk p-GaN, the hole concentration in p-SB with an In content of ∼15.2% increased by two orders of magnitude from 5.22 × 10¹⁷ to 5.28 × 10¹⁹ cm⁻³. The resistivity and mobility of the templates decreased gradually from 3.13 $\Omega \hspace{0.17em}·$ cm and 3.82 cm²/V s for p-GaN to 0.24 $\Omega \hspace{0.17em}·$ cm and 0.48 cm²/V s for p-SB with an In content of 15.2%. Temperature dependent Hall measurements were conducted to estimate the activation energy of the p-SB template. The p-SB with the In content of ∼15.2% is estimated to have an activation energy of 29 meV. These heavily doped p-SB templates have comparable material qualities to that of GaN. The atomic force microscopy height retraces of p-SB films show device quality surface morphology, with root mean square roughness ranging from 2.53 to 4.84 nm. The current results can impact the performances of several nitride-based devices, such as laser diodes, LEDs, solar cells, and photodetectors.

中文翻译：

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P 型 InxGa1−xN 半块状模板 (0.02 < x < 0.16)，室温空穴浓度为 1019cm−3，器件质量表面形貌

使用半块体方法，p-In _x Ga _1-x N 半块体 (p-SB) 模板通过金属有机化学气相沉积生长，铟含量范围为 2.4% 至 15.2%。与优化的体 p-GaN 相比，In 含量约为 15.2% 的 p-SB 中的空穴浓度增加了两个数量级，从 5.22 × 10 ¹⁷到 5.28 × 10 ¹⁹  cm ^-3。模板的电阻率和迁移率从 3.13 逐渐下降$\Omega \hspace{0.17em}·$ cm 和 3.82 cm ² /V s 对于 p-GaN 至 0.24$\Omega \hspace{0.17em}·$ cm 和 0.48 cm ² /V s 对于具有 15.2% In 含量的 p-SB。进行温度相关的霍尔测量以估计 p-SB 模板的活化能。In 含量约为 15.2% 的 p-SB 估计具有 29 meV 的活化能。这些重掺杂 p-SB 模板具有与 GaN 相当的材料质量。p-SB 薄膜的原子力显微镜高度回扫显示器件质量表面形态，均方根粗糙度范围为 2.53 至 4.84 nm。当前的结果会影响多种基于氮化物的器件的性能，例如激光二极管、LED、太阳能电池和光电探测器。