We report the effect of 4f electron doping on structural, electrical, and magneto-transport properties of Dy doped half Heusler Y_1-x(Dy)_xPdBi (x = 0, 0.2, 0.5, and 1) thin films grown by pulsed laser deposition. The electrical transport measurements show a typical semi-metallic behavior in the temperature range of 3 K ≤ T ≤ 300 K and a sharp drop in resistivity at low temperatures (<3 K) for all the samples. Magneto-transport measurements and Shubnikov de-Hass oscillations at high magnetic fields demonstrate that for these topologically non-trivial samples, Dy doping induced variation of spin–orbit coupling strength and lattice density plays an active role in modifying the Fermi surface, carrier concentration, and the effective electron mass of massless carriers. There is a uniform suppression of the onset of superconductivity-like phenomena with increased Dy doping, which is possibly related to the increasing local exchange field arising from the 4f electrons in Dy. Our results indicate that we can tune various band structure parameters of YPdBi by f electron doping, and strained thin films of Y_1-x(Dy)_xPdBi show surface dominated relativistic carrier transport at low temperatures.

中文翻译：

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Y1-x(Dy)xPdBi (0 ≤ x ≤ 1) 拓扑半金属薄膜的结构和传输特性

我们报告了 4 f电子掺杂对 Dy 掺杂半 Heusler Y _1-x (Dy) _x PdBi ( x = 0、0.2、0.5 和 1) 通过脉冲激光沉积生长的薄膜。电输运测量显示在 3 K ≤ T ≤ 300 K 的温度范围内具有典型的半金属行为，并且所有样品的电阻率在低温 (<3 K) 下急剧下降。高磁场下的磁传输测量和 Shubnikov de-Hass 振荡表明，对于这些拓扑非平凡的样品，Dy 掺杂引起的自旋轨道耦合强度和晶格密度的变化在修改费米表面、载流子浓度、和无质量载流子的有效电子质量。随着 Dy 掺杂的增加，对类似超导现象的发生有统一的抑制，这可能与 4 f引起的局部交换场增加有关。Dy 中的电子。我们的结果表明，我们可以通过f电子掺杂来调整 YPdBi 的各种能带结构参数，并且 Y _1-x (Dy) _x PdBi 的应变薄膜在低温下显示出表面主导的相对论性载流子传输。