Domain walls (DWs) are formed at the boundaries between domains formed in a ferroelectric, and experimental results have been reported on the phenomenon of electrical conductivity in the DW. DW conduction nonvolatile memory applications are possible by forming and removing DWs with the high DW conductivity (DWC). Here, we investigated two-electrode devices and three-electrode DWC nonvolatile devices with current–voltage curves that change according to the number of DWs. When the number of DWs formed in the epitaxial PbTiO₃ thin film was changed to 0, 2, and 4, the resistance of DWC was observed to decrease in the two-electrode device. For a three-electrode DWC nonvolatile memory having three electrodes with a structure similar to that of a flash memory structure, the slope of the source-drain current–voltage curve was adjusted by the gate electrode, and showed nonvolatile characteristics that can replace the flash memory.

中文翻译：

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由于铁电畴壁数量和非易失性存储器特性的人工图案化引起的电流变化

畴壁 (DW) 形成在铁电体中形成的畴之间的边界处，并且已经报道了关于 DW 中导电现象的实验结果。通过形成和去除具有高 DW 导电性 (DWC) 的 DW，DW 传导非易失性存储器应用成为可能。在这里，我们研究了电流-电压曲线根据 DW 数量变化的两电极器件和三电极 DWC 非易失性器件。当外延 PbTiO _{3 中}形成的 DWs 数量当薄膜变为 0、2 和 4 时，观察到双电极器件中 DWC 的电阻降低。对于具有类似于闪存结构的三个电极的三电极DWC非易失性存储器，源漏电流-电压曲线的斜率由栅电极调节，表现出可替代闪存的非易失性特性。记忆。