Sn-doped TiFe_0.5Ni_0.5Sb_1−xSn_x (x = 0, 0.05, 0.1, 0.2) were synthesized by vacuum arc melting (VAM). In addition to the half-Heusler phase, secondary phases of Fe–Sb-rich compound and Ti-rich compounds were obtained after VAM. The alloys were then subjected to ball milling for 1 h and 5 h. Ball milling for 1h led to microcrystalline grains, while that for 5 h led to nanocrystalline grains. Ball milling followed by spark plasma sintering (SPS) at 1173 K led to significant reduction in size of secondary phases in the microstructure. The undoped sample exhibited a ZT of 0.008 at 873 K for both 1h and 5h BM-SPS samples.

Sn 掺杂的 TiFe _0.5 Ni _0.5 Sb _{1− x} Sn _x ( x  = 0, 0.05, 0.1, 0.2) 通过真空电弧熔炼 (VAM) 合成。除了半 Heusler 相外，在 VAM 之后还获得了富 Fe-Sb 化合物和富 Ti 化合物的第二相。然后对合金进行球磨 1 小时和 5 小时。球磨 1 小时产生微晶晶粒，而球磨 5 小时产生纳米晶粒。球磨和放电等离子烧结 (SPS) 在 1173 K 下导致微观结构中第二相的尺寸显着减小。对于 1 小时和 5 小时 BM-SPS 样品，未掺杂的样品在 873 K 下的 ZT 均为 0.008。