Due to its unique I-V property, memristor is considered to be the key device for artificial intelligence application. Among the alternative memristor materials, organometal trihalide perovskite (OTP) follow with interest in photoelectric coupling area with excellent light absorption ability. However, the power consumption of OTP memristor still remains to be reduced. Here, Cs_0.05(FA_xMA_1-x)_0.95PbI_yBr_3-y (CsFAMAPbIBr) with prominent photoresponse property is used as the functional layer of the memristor. Maximum high resistance state (HRS)/low resistance state (LRS) (~100) and maximum power of 9.8$\times$10^-9 W is reached under small voltage (-1V~1 V) with W/OTP/Al structure. Since the oxide modification layer acts as a series resistance for the device, when 90 nm thickness of zinc oxide layer is added to the W/OTP interface, the power consumption of the device is reduced by an order of magnitude. Then, the maximum power of the device decreases by two orders of magnitude (to 2.5$\times$10^-11 W) under 2 mW/cm² light condition, and the phenomenon called negative photoconductance (NPC) effect that defined as an increase in resistance upon exposure to illumination. Through the optical and oxide modification, OTP memristor with low power consumption is achieved.

由于其独特的IV特性，忆阻器被认为是人工智能应用的关键器件。在替代的忆阻器材料中，有机金属三卤化物钙钛矿（OTP）紧随其后的是具有优异光吸收能力的光电耦合区域。然而，OTP忆阻器的功耗仍有待降低。这里，具有突出的光响应特性的Cs _0.05 (FA _x MA _1-x ) _0.95 PbI _y Br _3-y (CsFAMAPbIBr)用作忆阻器的功能层。最大高阻态 (HRS)/低阻态 (LRS) (~100) 最大功率 9.8$\times$W/OTP/Al结构在小电压（-1V~ 1V）下达到10 ^-9 W。 由于氧化物修饰层对器件起到串联电阻的作用，当 在W/OTP界面加入90nm厚的氧化锌层时，器件的功耗降低了一个数量级。然后，设备的最大功率降低两个数量级（至 2.5$\times$10 ^-11 W) 在 2  mW/cm ²光照条件下，以及称为负光电导 (NPC) 效应的现象，其定义为暴露于光照时电阻增加。通过光学和氧化物改性，实现了低功耗的OTP忆阻器。