Journal of Alloys and Compounds ( IF 5.8 ) Pub Date : 2021-09-24 , DOI: 10.1016/j.jallcom.2021.162088 Yoonho Ahn 1 , Jong Yeog Son 2
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Materials
in which ferroelectric polarization can be locally controlled have potential for high-density information storage applications. Herein, we investigated the ferroelectric polarization switching characteristics of epitaxial BaTiO3/PbTiO3 (BTO/PTO) multilayer thin films by using piezoresponse force microscopy. Pulsed laser deposition was used to form an epitaxial BTO layer on an epitaxial ferroelectric PTO single thin film. This epitaxial BTO/PTO multilayer thin film exhibited an imprint phenomenon, in which the internal electric field was asymmetrically induced and the ferroelectric hysteresis loop was shifted. Owing to this imprint phenomenon, a large difference occurred between the two coercive electric fields of the ferroelectric hysteresis loop. Because the coercive electric field was reduced in one direction, a relatively small switching voltage was required to form ferroelectric polarization nanobits in a local region and the size of the switched nanobits was minimized. This behavior can be utilized as the basis for developing high-density ferroelectric-based storage media.
中文翻译：
BaTiO3/PbTiO3多层薄膜铁电开关特性的压印现象
材料
其中可以局部控制铁电极化的材料具有用于高密度信息存储应用的潜力。在此，我们研究了外延 BaTiO 3 /PbTiO 3的铁电极化开关特性(BTO/PTO) 多层薄膜使用压电响应力显微镜。脉冲激光沉积用于在外延铁电 PTO 单薄膜上形成外延 BTO 层。这种外延 BTO/PTO 多层薄膜表现出压印现象，其中内部电场不对称感应，铁电磁滞回线发生偏移。由于这种印记现象，铁电磁滞回线的两个矫顽电场之间出现了很大的差异。由于矫顽电场在一个方向上减小，需要相对较小的开关电压来在局部区域形成铁电极化纳米位，并且开关纳米位的尺寸被最小化。这种行为可以作为开发高密度铁电存储介质的基础。
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