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Partial Recovery of Dynamic R ON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs
IEEE Transactions on Electron Devices ( IF 2.9 ) Pub Date : 2021-08-25 , DOI: 10.1109/ted.2021.3105075
Marcello Cioni , Nicolo Zagni , Ferdinando Iucolano , Maurizio Moschetti , Giovanni Verzellesi , Alessandro Chini

Dynamic RON{R}_{\mathrm{\scriptscriptstyle {ON}}} dispersion due to buffer traps is a well-known issue of GaN power high electron mobility transistors (HEMTs), critically impacting their performance and stability. Several works show that the dynamic RON{R}_{\mathrm{\scriptscriptstyle {ON}}} reaches a maximum for some OFF-state drain–source voltage ( VDS,OFF{V}_{\text{DS},{\mathrm{\scriptscriptstyle OFF}}} ) value typically in the range of several hundred volts and then partially recovers to smaller values. In this work, we propose a quantitative explanation for this behavior, attributing it to the charging/discharging dynamics of carbon (C)-related buffer traps. We characterize the dynamic RON{R}_{\mathrm{\scriptscriptstyle {ON}}} in packaged p-GaN gate AlGaN/GaN HEMTs with a custom measurement setup. We find that in these devices, the relative RON{R}_{\mathrm{\scriptscriptstyle {ON}}} increase reaches a maximum of 60% for VDS,OFF≈100{V}_{\text {DS}, {\mathrm{\scriptscriptstyle {OFF}}}} \approx 100 –200 V, partially recovering to about 30% as VDS,OFF{V}_{\text {DS}, {\mathrm{\scriptscriptstyle {OFF}}}} is raised to 500 V. We ascribe this behavior to the partial neutralization of C-related acceptor traps in the buffer due to trapping of holes produced by a high-field generation mechanism. This explanation is supported by calibrated 2-D numerical simulations, that successfully reproduce the experimentally observed RON{R}_{\mathrm{\scriptscriptstyle {ON}}} reduction only when including a hole generation mechanism.

中文翻译:


p-GaN 栅极 AlGaN/GaN 功率 HEMT 中动态 R ON 与断态应力电压的部分恢复



由于缓冲陷阱导致的动态 RON{R}_{\mathrm{\scriptscriptstyle {ON}}} 色散是 GaN 功率高电子迁移率晶体管 (HEMT) 的一个众所周知的问题,严重影响其性能和稳定性。一些研究表明,动态 RON{R}_{\mathrm{\scriptscriptstyle {ON}}} 在某些关态漏源电压 ( VDS,OFF{V}_{\text{DS},{ \mathrm{\scriptscriptstyle OFF}}} )值通常在几百伏的范围内,然后部分恢复到较小的值。在这项工作中,我们提出了对此行为的定量解释,将其归因于碳(C)相关缓冲陷阱的充电/放电动力学。我们使用定制测量设置来表征封装 p-GaN 栅极 AlGaN/GaN HEMT 中的动态 RON{R}_{\mathrm{\scriptscriptstyle {ON}}}。我们发现,在这些器件中,对于 VDS,OFF≈100{V}_{\text {DS},{ \mathrm{\scriptscriptstyle {OFF}}}} \约 100 –200 V,部分恢复至约 30% VDS,OFF{V}_{\text {DS}, {\mathrm{\scriptscriptstyle {OFF}}} } 升高至 500 V。我们将此行为归因于缓冲区中 C 相关受体陷阱的部分中和,这是由于高场生成机制产生的空穴的捕获所致。这种解释得到了校准的二维数值模拟的支持,只有在包含空穴生成机制时,该模拟才能成功重现实验观察到的 RON{R}_{\mathrm{\scriptscriptstyle {ON}}} 减少。
更新日期:2021-08-25
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