Dynamic RON{R}_{\mathrm{\scriptscriptstyle {ON}}} dispersion due to buffer traps is a well-known issue of GaN power high electron mobility transistors (HEMTs), critically impacting their performance and stability. Several works show that the dynamic RON{R}_{\mathrm{\scriptscriptstyle {ON}}} reaches a maximum for some OFF-state drain–source voltage ( VDS,OFF{V}_{\text{DS},{\mathrm{\scriptscriptstyle OFF}}} ) value typically in the range of several hundred volts and then partially recovers to smaller values. In this work, we propose a quantitative explanation for this behavior, attributing it to the charging/discharging dynamics of carbon (C)-related buffer traps. We characterize the dynamic RON{R}_{\mathrm{\scriptscriptstyle {ON}}} in packaged p-GaN gate AlGaN/GaN HEMTs with a custom measurement setup. We find that in these devices, the relative RON{R}_{\mathrm{\scriptscriptstyle {ON}}} increase reaches a maximum of 60% for VDS,OFF≈100{V}_{\text {DS}, {\mathrm{\scriptscriptstyle {OFF}}}} \approx 100 –200 V, partially recovering to about 30% as VDS,OFF{V}_{\text {DS}, {\mathrm{\scriptscriptstyle {OFF}}}} is raised to 500 V. We ascribe this behavior to the partial neutralization of C-related acceptor traps in the buffer due to trapping of holes produced by a high-field generation mechanism. This explanation is supported by calibrated 2-D numerical simulations, that successfully reproduce the experimentally observed RON{R}_{\mathrm{\scriptscriptstyle {ON}}} reduction only when including a hole generation mechanism.

中文翻译：

---

p-GaN 栅极 AlGaN/GaN 功率 HEMT 中动态 R ON 与断态应力电压的部分恢复


由于缓冲陷阱导致的动态 RON{R}_{\mathrm{\scriptscriptstyle {ON}}} 色散是 GaN 功率高电子迁移率晶体管 (HEMT) 的一个众所周知的问题，严重影响其性能和稳定性。一些研究表明，动态 RON{R}_{\mathrm{\scriptscriptstyle {ON}}} 在某些关态漏源电压 ( VDS,OFF{V}_{\text{DS},{ \mathrm{\scriptscriptstyle OFF}}} ）值通常在几百伏的范围内，然后部分恢复到较小的值。在这项工作中，我们提出了对此行为的定量解释，将其归因于碳（C）相关缓冲陷阱的充电/放电动力学。我们使用定制测量设置来表征封装 p-GaN 栅极 AlGaN/GaN HEMT 中的动态 RON{R}_{\mathrm{\scriptscriptstyle {ON}}}。我们发现，在这些器件中，对于 VDS，OFF≈100{V}_{\text {DS}，{ \mathrm{\scriptscriptstyle {OFF}}}} \约 100 –200 V，部分恢复至约 30% VDS,OFF{V}_{\text {DS}, {\mathrm{\scriptscriptstyle {OFF}}} } 升高至 500 V。我们将此行为归因于缓冲区中 C 相关受体陷阱的部分中和，这是由于高场生成机制产生的空穴的捕获所致。这种解释得到了校准的二维数值模拟的支持，只有在包含空穴生成机制时，该模拟才能成功重现实验观察到的 RON{R}_{\mathrm{\scriptscriptstyle {ON}}} 减少。