New technologies are continuously investigated to overcome the physical limitations of the downscaling process of microelectronic industry in order to perpetuate the miniaturization of devices as well as to enhance their capabilities. Memories are important components of almost any modern system. Applications, such as portable devices for which magnetic storage is not viable, prompt the search for universal memories that combine writing and retention capabilities. In this context, materials and structures that exhibit resistive switching are of utmost importance for the development of nonvolatile memories. In this context, graphene oxide has emerged as a promising resistive medium in metal-insulator–metal memory structures, because of the low cost and easy processing. Despite the controversy on the switching mechanism, graphene oxide-based memristors have also been proposed as self-selective memory elements. Nonlinearity is a fundamental characteristic of any memristor. In this work, we explore the occurrence of switching in graphene oxide, even when weak nonlinearities are observed. Metal-graphene oxide-metal structures were subjected to voltage cycling by applying triangular inputs and measuring the current. The nonlinearities were quantified by harmonic analysis, using total harmonic distortion as a figure of merit. An increasing nonlinear behavior is observed as the condition for switching is built up for increasing input amplitudes. This parameter allows an earlier identification of the set process. The harmonic analysis helps to discriminate the nonlinear perturbation to the linear response and allowing modeling of the current-voltage curve.

中文翻译：

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氧化石墨烯忆阻器非线性响应的谐波分析


人们不断研究新技术，以克服微电子工业尺寸缩小过程的物理限制，从而实现设备的小型化并增强其功能。内存是几乎所有现代系统的重要组成部分。磁存储不可行的便携式设备等应用促使人们寻找兼具写入和保留功能的通用存储器。在这种情况下，表现出电阻开关的材料和结构对于非易失性存储器的开发至关重要。在这种背景下，氧化石墨烯因其成本低且易于加工而成为金属-绝缘体-金属存储结构中一种有前景的电阻介质。尽管开关机制存在争议，基于氧化石墨烯的忆阻器也被提议作为自选择存储元件。非线性是任何忆阻器的基本特征。在这项工作中，我们探索了氧化石墨烯中开关的发生，即使观察到弱非线性。通过施加三角形输入并测量电流，使金属-氧化石墨烯-金属结构经历电压循环。非线性通过谐波分析进行量化，使用总谐波失真作为品质因数。随着输入幅度的增加而建立开关条件，可以观察到非线性行为的增加。该参数允许更早地识别设置的过程。谐波分析有助于区分线性响应的非线性扰动，并允许对电流-电压曲线进行建模。